Microwave transistor noise models including temperature dependence

被引：0

作者：

Marinkovic, Z ^{[1
]}

Markovic, V ^{[1
]}

Caddemi, A ^{[1
]}

Milovanovic, B ^{[1
]}

机构：

[1] Fac Elect Engn, YU-18000 Nish, Serbia Monteneg, Yugoslavia

来源：

TELSIKS 2003: 6TH INTERNATIONAL CONFERENCE ON TELECOMMUNICATIONS IN MODERN SATELLITE, CABLE AND BROADCASTING SERVICE, VOLS 1 AND 2, PROCEEDINGS OF PAPERS | 2003年

关键词：

neural networks; microwave transistors; noise parameters; temperature;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents results of transistor noise parameters' modeling including their temperature dependence. Transistor noise models based on multilayer perceptron neural networks are proposed. Using transistor noise data for certain number of temperatures, appropriate neural networks were trained. Once trained the developed model can be used for efficient prediction of transistor noise parameters for any operating temperature, avoiding additional measurements.

引用

页码：561 / 564

页数：4

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