Creation of p-n junction and Schottky barrier diodes by chemical doping of pyrolyzed parylene C

被引：0
|
作者：
Morton, Kirstin C. [1 ]
Kim, Yeji [2 ]
Hayama, Kazumi [3 ]
Tokuhisa, Hideo [4 ]
Baker, Lane A. [1 ]
机构：
[1] Indiana Univ, Dept Chem, Bloomington, IN 47405 USA
[2] Natl Inst Adv Ind Sci & Technol, Nanosyst Res Inst, Tsukuba, Ibaraki 3058568, Japan
[3] Natl Inst Adv Ind Sci & Technol, Innovat Ctr Adv Nanodevices, Tsukuba, Ibaraki 3058568, Japan
[4] Natl Inst Adv Ind Sci & Technol, Flexible Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan
来源：
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 2013年 / 246卷
关键词：
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
21-ANYL
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页数：1
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