Shallow trench isolation dimensions effects on leakage current and doping concentration of advanced p-n junction diodes

被引：3

作者：

Poyai, A

Rittaporn, I

Simoen, E

Claeys, C

Rooyackers, R

机构：

[1] TMEC, Chachoengsao 24000, Thailand

[2] IMEC, B-3001 Heverlee, Belgium

[3] Katholieke Univ Leuven, EE Dept, B-3001 Heverlee, Belgium

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2004年 / 114卷

关键词：

shallow trench isolation; leakage current; doping concentration; stress;

D O I：

10.1016/j.mseb.2004.07.066

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper describes the impact of active area and shallow trench isolation (STI) width on the junction leakage current and doping concentration. A higher junction leakage current is found for a narrower active area and STI width. This is mainly due to a higher compressive stress. This compressive stress also affects the doping concentration near the junction. A higher compressive stress when reduce active area width causes a higher doping concentration while a higher compressive stress when reduce STI width results in a lower doping concentration. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：372 / 375

页数：4

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