Shallow trench isolation dimensions effects on leakage current and doping concentration of advanced p-n junction diodes

This paper describes the impact of active area and shallow trench isolation (STI) width on the junction leakage current and doping concentration. A higher junction leakage current is found for a narrower active area and STI width. This is mainly due to a higher compressive stress. This compressive stress also affects the doping concentration near the junction. A higher compressive stress when reduce active area width causes a higher doping concentration while a higher compressive stress when reduce STI width results in a lower doping concentration. (C) 2004 Elsevier B.V. All rights reserved.