Characterization of the Effects of Neutron--Induced Displacement Damage on the SiGe:C Heterojunction Bipolar Transistors

被引：0
|
作者：
Sotskov, Denis I. [1 ]
Kuznetsov, Alexander G. [1 ]
Elesin, Vadim V. [1 ]
Selishchev, Ilya A. [1 ]
Kotov, Vladislav N. [1 ]
Nikiforov, Alexander Y. [1 ]
机构：
[1] Natl Res Nucl Univ, MEPhI Moscow Engn Phys Inst, Moscow, Russia
来源：
2021 21ST EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS) | 2021年
关键词：
SiGe:C HBT; displacement damage effects; fastneutron irradiation; radiation effects; RADIATION; DESIGN; HBT;
D O I：
10.1109/RADECS53308.2021.9954481
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper explores the effects of neutron-induced displacement damage on static and high frequency parameters of three types of SiGe:. npn heterostructure bipolar transistors from the SGB25V BiCMOS technology.
引用
收藏
页码：21 / 24
页数：4
相关论文
共 50 条
  • [41] Influence of the oxygen content in SiGe on the parameters of Si/SiGe heterojunction bipolar transistors
    D. Knoll
    B. Heinemann
    D. Bolze
    K. E. Ehwald
    G. Fischer
    D. Krüger
    T. Morgenstern
    E. Naumann
    P. Schley
    B. Tillack
    D. Wolansky
    Journal of Electronic Materials, 1998, 27 : 1022 - 1026
  • [42] Impact of interstitial carbon on base current ideality in SiGe:C heterojunction bipolar transistors
    Liu, J. P.
    Verma, P. R.
    Chu, S. F.
    Zhang, S. Q.
    Loh, W. B.
    Leong, K. C.
    Siew, H. L.
    Sohn, D. K.
    Hsia, L. C.
    2006 INTERNATIONAL SYMPOSIUM ON VLSI DESIGN, AUTOMATION, AND TEST (VLSI-DAT), PROCEEDINGS OF TECHNICAL PAPERS, 2006, : 271 - +
  • [43] Manufacturability of SiGe:C and Si epitaxy for heterojunction bipolar transistors integrated in a BiCMOS technology
    Tillack, B
    Knoll, D
    Yamamoto, Y
    Heinemann, B
    Ehwald, KE
    Winkler, W
    Rücker, H
    RAPID THERMAL AND OTHER SHORT-TIME PROCESSING TECHNOLOGIES III, PROCEEDINGS, 2002, 2002 (11): : 73 - 79
  • [44] The physical origins of mismatch in Si/SiGe:C heterojunction bipolar transistors for BiCMOS technologies
    Danaie, Stephane
    Marin, Mathieu
    Ghibaudo, Gerard
    SOLID-STATE ELECTRONICS, 2008, 52 (02) : 323 - 337
  • [45] Spectral Resolution of Photon Emission from SiGe:C Heterojunction Bipolar Transistors (HBTs)
    Kindereit, Ulrike
    Mutihac, Oana-Mihaela
    Boit, Christian
    Tillack, Bernd
    2011 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2011,
  • [46] Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation
    孙亚宾
    付军
    许军
    王玉东
    周卫
    张伟
    崔杰
    李高庆
    刘志弘
    Chinese Physics B, 2014, (11) : 435 - 441
  • [47] Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation
    Sun Ya-Bin
    Fu Jun
    Xu Jun
    Wang Yu-Dong
    Zhou Wei
    Zhang Wei
    Cui Jie
    Li Gao-Qing
    Liu Zhi-Hong
    CHINESE PHYSICS B, 2014, 23 (11)
  • [48] Performance evaluation of SiGe heterojunction bipolar transistors on virtual substrates
    Jankovic, ND
    O'Neill, A
    SOLID-STATE ELECTRONICS, 2004, 48 (02) : 277 - 284
  • [49] Optical characterization of heterojunction bipolar transistors
    Smith, PB
    Duncan, WM
    Allerman, AA
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (04) : 1011 - 1016
  • [50] SIGE-BASE, POLYEMITTER HETEROJUNCTION BIPOLAR-TRANSISTORS
    PATTON, GL
    HARAME, DL
    STORK, JMC
    MEYERSON, BS
    SCILLA, GJ
    GANIN, E
    1989 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS, 1989, : 95 - 96
12345