Characterization of the Effects of Neutron--Induced Displacement Damage on the SiGe:C Heterojunction Bipolar Transistors

被引：0

作者：

Sotskov, Denis I. ^{[1
]}

Kuznetsov, Alexander G. ^{[1
]}

Elesin, Vadim V. ^{[1
]}

Selishchev, Ilya A. ^{[1
]}

Kotov, Vladislav N. ^{[1
]}

Nikiforov, Alexander Y. ^{[1
]}

机构：

[1] Natl Res Nucl Univ, MEPhI Moscow Engn Phys Inst, Moscow, Russia

来源：

2021 21ST EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS) | 2021年

关键词：

SiGe:C HBT; displacement damage effects; fastneutron irradiation; radiation effects; RADIATION; DESIGN; HBT;

D O I：

10.1109/RADECS53308.2021.9954481

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper explores the effects of neutron-induced displacement damage on static and high frequency parameters of three types of SiGe:. npn heterostructure bipolar transistors from the SGB25V BiCMOS technology.

引用

页码：21 / 24

页数：4

共 50 条

[21] Low Frequency Noise temperature measurements in SiGe:C Heterojunction Bipolar Transistors
Seif, M.
Pascal, F.
Sagnes, B.
Hoffmann, A.
Haendler, S.
Chevalier, P.
Gloria, D.
2015 INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF), 2015,
[22] Study of low frequency noise in advanced SiGe:C heterojunction bipolar transistors
Seif, M.
Pascal, F.
Sagnes, B.
Hoffmann, A.
Haendler, S.
Chevalier, P.
Gloria, D.
PROCEEDINGS OF THE 2014 44TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2014), 2014, : 373 - 376
[23] SiGe:C heterojunction bipolar transistors:: From materials research to chip fabrication
Rücker, H
Heinemann, B
Knoll, D
Ehwald, KE
ADVANCES IN SOLID STATE PHYSICS 42, 2002, 42 : 471 - 482
[24] DC Current-crowding estimation for SiGe:C heterojunction bipolar transistors
Ramirez-Garcia, E.
Garduno-Nolasco, E.
Rodriguez-Mendez, L. M.
Diaz-Albarran, L. M.
Valdez-Perez, D.
Galaz-Larios, M. C.
Aniel, F.
Zerounian, N.
Enciso-Aguilar, M. A.
SOLID-STATE ELECTRONICS, 2019, 153 : 1 - 7
[25] Collector-up SiGe heterojunction bipolar transistors
Gruhle, A
Kibbel, H
Mähner, C
Mroczek, W
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (07) : 1510 - 1513
[26] Development on SiGe/Si film heterojunction bipolar transistors
Guo, L
Li, KC
Liu, DG
Zhang, J
Yi, Q
d'Avitaya, FA
Xu, SL
FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 2000, 4086 : 236 - 239
[27] Implementing SiGe technology to produce heterojunction bipolar transistors
University of Maine, Orono, ME, United States
不详
不详
MICRO, 2001, 19 (07): : 31 - 42
[28] Materials and technology issues for SiGe heterojunction bipolar transistors
Ashburn, P
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2001, 4 (06) : 521 - 527
[29] DESIGN ISSUES FOR SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS
STORK, JMC
PATTON, GL
CRABBE, EF
HARAME, DL
MEYERSON, BS
IYER, SS
GANIN, E
PROCEEDINGS OF THE 1989 BIPOLAR CIRCUITS AND TECHNOLOGY MEETING, 1989, : 57 - 64
[30] Reliability of microwave SiGe/Si heterojunction bipolar transistors
Ma, ZQ
Bhattacharya, P
Rieh, JS
Ponchak, GE
Alterovitz, SA
Croke, ET
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2001, 11 (10) : 401 - 403

← 1 2 3 4 5 →