Characterization of the Effects of Neutron--Induced Displacement Damage on the SiGe:C Heterojunction Bipolar Transistors

被引：0
|
作者：
Sotskov, Denis I. [1 ]
Kuznetsov, Alexander G. [1 ]
Elesin, Vadim V. [1 ]
Selishchev, Ilya A. [1 ]
Kotov, Vladislav N. [1 ]
Nikiforov, Alexander Y. [1 ]
机构：
[1] Natl Res Nucl Univ, MEPhI Moscow Engn Phys Inst, Moscow, Russia
来源：
2021 21ST EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS) | 2021年
关键词：
SiGe:C HBT; displacement damage effects; fastneutron irradiation; radiation effects; RADIATION; DESIGN; HBT;
D O I：
10.1109/RADECS53308.2021.9954481
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper explores the effects of neutron-induced displacement damage on static and high frequency parameters of three types of SiGe:. npn heterostructure bipolar transistors from the SGB25V BiCMOS technology.
引用
收藏
页码：21 / 24
页数：4
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