GaN-on-Diamond: The Next GaN

被引:0
|
作者
Ejeckam, Felix [1 ]
Francis, Daniel [1 ]
Faili, Firooz [1 ]
Lowe, Frank [1 ]
Wilman, Jon J. [1 ]
Mollart, Tim [1 ]
Dodson, Joe [1 ]
Twitchen, Daniel J. [1 ]
Bolliger, Bruce [1 ]
Babic, Dubravko [2 ]
机构
[1] Element Six Technol, Santa Clara, CA 95054 USA
[2] Univ Zagreb, Unska, Croatia
关键词
POWER;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:124 / +
页数:7
相关论文
共 50 条
  • [31] The Effect of Interlayer Microstructure on the Thermal Boundary Resistance of GaN-on-Diamond Substrate
    Jia, Xin
    Huang, Lu
    Sun, Miao
    Zhao, Xia
    Wei, Junjun
    Li, Chengming
    COATINGS, 2022, 12 (05)
  • [32] Enhancement of diamond seeding on aluminum nitride dielectric by electrostatic adsorption for GaN-on-diamond preparation
    Jia, Xin
    Wei, Jun-jun
    Huang, Yabo
    Shao, Siwu
    An, Kang
    Kong, Yuechan
    Wu, Lishu
    Qi, Zhina
    Liu, Jinlong
    Chen, Liangxian
    Li, Chengming
    JOURNAL OF MATERIALS RESEARCH, 2020, 35 (05) : 508 - 515
  • [33] Barrier-Layer Optimization for Enhanced GaN-on-Diamond Device Cooling
    Zhou, Yan
    Anaya, Julian
    Pomeroy, James
    Sun, Huarui
    Gu, Xing
    Xie, Andy
    Beam, Edward
    Becker, Michael
    Grotjohn, Timothy A.
    Lee, Cathy
    Kuball, Martin
    ACS APPLIED MATERIALS & INTERFACES, 2017, 9 (39) : 34416 - 34422
  • [34] Thermal Performance Improvement of GaN-on-Diamond High Electron Mobility Transistors
    Tadjer, Marko J.
    Anderson, Travis J.
    Gallagher, James C.
    Raad, Peter E.
    Komarov, Pavel
    Koehler, Andrew D.
    Hobart, Karl D.
    Kub, Fritz J.
    2018 76TH DEVICE RESEARCH CONFERENCE (DRC), 2018,
  • [35] Enhancement of diamond seeding on aluminum nitride dielectric by electrostatic adsorption for GaN-on-diamond preparation
    Xin Jia
    Jun-jun Wei
    Yabo Huang
    Siwu Shao
    Kang An
    Yuechan Kong
    Lishu Wu
    Zhina Qi
    Jinlong Liu
    Liangxian Chen
    Chengming Li
    Journal of Materials Research, 2020, 35 : 508 - 515
  • [36] The influence of dielectric layer on the thermal boundary resistance of GaN-on-diamond substrate
    Jia, Xin
    Wei, Jun-jun
    Kong, Yuechan
    Li, Cheng-ming
    Liu, Jinlong
    Chen, Liangxian
    Sun, Fangyuan
    Wang, Xinwei
    SURFACE AND INTERFACE ANALYSIS, 2019, 51 (07) : 783 - 790
  • [37] A novel strategy for GaN-on-diamond device with a high thermal boundary conductance
    Mu, Fengwen
    Xu, Bin
    Wang, Xinhua
    Gao, Runhua
    Huang, Sen
    Wei, Ke
    Takeuchi, Kai
    Chen, Xiaojuan
    Yin, Haibo
    Wang, Dahai
    Yu, Jiahan
    Suga, Tadatomo
    Shiomi, Junichiro
    Liu, Xinyu
    JOURNAL OF ALLOYS AND COMPOUNDS, 2022, 905
  • [38] Temperature-dependent small signal performance of GaN-on-diamond HEMTs
    Chen, Yongbo
    Xu, Yuehang
    Zhou, Jianjun
    Kong, Yuechan
    Chen, Tangsheng
    Zhang, Yong
    Yan, Bo
    Xu, Ruimin
    INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 2020, 33 (03)
  • [39] Impact of thermal boundary resistance on the thermal design of GaN-on-Diamond HEMTs
    Guo, Huaixin
    Kong, Yuechan
    Chen, Tangsheng
    2019 IEEE 69TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2019, : 1842 - 1847
  • [40] Transient thermoreflectance wafer mapping for process control and development: GaN-on-Diamond
    Pomeroy, James W.
    Simon, Roland B.
    Middleton, Callum
    Kuball, Martin
    2017 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS), 2017,