GaN-on-Diamond: The Next GaN

被引：0

作者：

Ejeckam, Felix ^{[1
]}

Francis, Daniel ^{[1
]}

Faili, Firooz ^{[1
]}

Lowe, Frank ^{[1
]}

Wilman, Jon J. ^{[1
]}

Mollart, Tim ^{[1
]}

Dodson, Joe ^{[1
]}

Twitchen, Daniel J. ^{[1
]}

Bolliger, Bruce ^{[1
]}

Babic, Dubravko ^{[2
]}

机构：

[1] Element Six Technol, Santa Clara, CA 95054 USA

[2] Univ Zagreb, Unska, Croatia

来源：

MICROWAVE JOURNAL | 2014年 / 57卷 / 05期

关键词：

POWER;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：124 / +

页数：7

共 50 条

[21] Contactless Thermal Boundary Resistance Measurement of GaN-on-Diamond Wafers
Pomeroy, James W.
Simon, Roland Baranyai
Sun, Huarui
Francis, Daniel
Faili, Firooz
Twitchen, Daniel J.
Kuball, Martin
IEEE ELECTRON DEVICE LETTERS, 2014, 35 (10) : 1007 - 1009
[22] Thermal Interface Resistance Measurements for GaN-on-Diamond Composite Substrates
Cho, Jungwan
Won, Yoonjin
Francis, Daniel
Asheghi, Mehdi
Goodson, Kenneth E.
2014 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS): INTEGRATED CIRCUITS IN GAAS, INP, SIGE, GAN AND OTHER COMPOUND SEMICONDUCTORS, 2014,
[23] Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices
Yates, Luke
Anderson, Jonathan
Gu, Xing
Lee, Cathy
Bai, Tingyu
Mecklenburg, Matthew
Aoki, Toshihiro
Goorsky, Mark S.
Kuball, Martin
Piner, Edwin L.
Graham, Samuel
ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (28) : 24302 - 24309
[24] Formation and characterization of 4-inch GaN-on-diamond substrates
Francis, D.
Faili, F.
Babic, D.
Ejeckam, F.
Nurmikko, A.
Maris, H.
DIAMOND AND RELATED MATERIALS, 2010, 19 (2-3) : 229 - 233
[25] FEM thermal and stress analysis of bonded GaN-on-diamond substrate
Zhai, Wenbo
Zhang, Jingwen
Chen, Xudong
Bu, Renan
Wang, Hongxing
Hou, Xun
AIP ADVANCES, 2017, 7 (09):
[26] FEM thermal analysis of high power GaN-on-diamond HEMTs
Xudong Chen
Wenbo Zhai
Jingwen Zhang
Renan Bu
Hongxing Wang
Xun Hou
Journal of Semiconductors, 2018, 39 (10) : 50 - 56
[27] FEM thermal analysis of high power GaN-on-diamond HEMTs
Chen, Xudong
Zhai, Wenbo
Zhang, Jingwen
Bu, Renan
Wang, Hongxing
Hou, Xun
JOURNAL OF SEMICONDUCTORS, 2018, 39 (10)
[28] Effect of GaN-on-diamond integration technology on its thermal properties
Li, Yao
Zheng, Zixuan
Zhang, Chao
Pu, Hongbin
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 36 (10)
[29] Optimizing GaN-on-diamond Transistor Geometry for Maximum Output Power
Pomeroy, J. W.
Kuball, M.
2014 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS): INTEGRATED CIRCUITS IN GAAS, INP, SIGE, GAN AND OTHER COMPOUND SEMICONDUCTORS, 2014,
[30] Impact of thinning the GaN buffer and interface layer on thermal and electrical performance in GaN-on-diamond electronic devices
Middleton, Callum
Chandrasekar, Hareesh
Singh, Manikant
Pomeroy, James W.
Uren, Michael J.
Francis, Daniel
Kuball, Martin
APPLIED PHYSICS EXPRESS, 2019, 12 (02)

← 1 2 3 4 5 →