Transparent Electronics for See-Through AMOLED Displays

被引:53
|
作者
Riedl, Thomas [1 ]
Goerrn, Patrick [1 ]
Kowalsky, Wolfgang [1 ]
机构
[1] Tech Univ Carolo Wilhelmina Braunschweig, Inst High Frequency Technol, D-38106 Braunschweig, Germany
来源
JOURNAL OF DISPLAY TECHNOLOGY | 2009年 / 5卷 / 12期
关键词
Active matrix organic light-emitting diodes (OLED); bias stress; passivation; stability; transparent thin-film transistors (TFTs); zinc-tin-oxide (ZTO); THIN-FILM TRANSISTORS; AMORPHOUS OXIDE SEMICONDUCTORS; STABILITY; PIXEL; CIRCUITS; OXYGEN;
D O I
10.1109/JDT.2009.2023093
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Transparent thin-film-transistors (TFTs) with a channel semiconductor based on the zinc-tin-oxide (ZTO) system are presented. Specifically, the technological and material aspects of the plasma-assisted pulsed laser deposition of these materials are discussed. The supply of additional radical oxygen species will be evidenced to significantly reduce defects in the material and as a consequence allows for well-behaved n-channel TFTs with mobilities higher than 10 cm(2)V(-1)s(-1) and a threshold voltage in the range of 0 V. In addition the devices are extremely stable versus bias/current stress, which is especially important for active matrix OLED applications. Based on a detailed understanding of the interaction of the TFT channels with oxygen a strategy for the thin-film encapsulation of the TFTs will be presented, which leaves their device characteristics unaffected.
引用
收藏
页码:501 / 508
页数:8
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