Transition-metal adatoms on 2D-GaAs: a route to chiral magnetic 2D materials by design

被引：3

作者：

Gonzalez-Garcia, A. ^{[1
,2
]}

Lopez-Perez, W. ^{[1
]}

Gonzalez-Hernandez, R. ^{[1
]}

Bacaksiz, C. ^{[2
,3
,4
,5
]}

Sabani, D. ^{[2
,3
]}

Milosevic, M., V ^{[2
,3
]}

Peeters, F. M. ^{[2
,3
]}

机构：

[1] Univ Norte, Dept Fis, Grp Invest Fis Aplicada, Barranquilla, Colombia

[2] Univ Antwerp, Dept Phys, Groenenborgerlaan 171, B-2020 Antwerp, Belgium

[3] Univ Antwerp, NANOlab Ctr Excellence, Antwerp, Belgium

[4] Bremen Ctr Computat Mat Sci BCCMS, D-28359 Bremen, Germany

[5] Beijing & Computat Sci & Appl Res Inst Shenzhen, Computat Sci Res Ctr, Shenzhen, Peoples R China

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2021年 / 33卷 / 14期

关键词：

DFT; 2D-GaAs; transition metal atom; magneto-electronics; MAE;

D O I：

10.1088/1361-648X/abe077

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Using relativistic density-functional calculations, we examine the magneto-crystalline anisotropy and exchange properties of transition-metal atoms adsorbed on 2D-GaAs. We show that single Mn and Mo atom (Co and Os) strongly bind on 2D-GaAs, and induce local out-of-plane (in-plane) magnetic anisotropy. When a pair of TM atoms is adsorbed on 2D-GaAs in a close range from each other, magnetisation properties change (become tunable) with respect to concentrations and ordering of the adatoms. In all cases, we reveal presence of strong Dzyaloshinskii-Moriya interaction. These results indicate novel pathways towards two-dimensional chiral magnetic materials by design, tailored for desired applications in magneto-electronics.

引用

页数：10

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