Transition-metal adatoms on 2D-GaAs: a route to chiral magnetic 2D materials by design

被引:3
|
作者
Gonzalez-Garcia, A. [1 ,2 ]
Lopez-Perez, W. [1 ]
Gonzalez-Hernandez, R. [1 ]
Bacaksiz, C. [2 ,3 ,4 ,5 ]
Sabani, D. [2 ,3 ]
Milosevic, M., V [2 ,3 ]
Peeters, F. M. [2 ,3 ]
机构
[1] Univ Norte, Dept Fis, Grp Invest Fis Aplicada, Barranquilla, Colombia
[2] Univ Antwerp, Dept Phys, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
[3] Univ Antwerp, NANOlab Ctr Excellence, Antwerp, Belgium
[4] Bremen Ctr Computat Mat Sci BCCMS, D-28359 Bremen, Germany
[5] Beijing & Computat Sci & Appl Res Inst Shenzhen, Computat Sci Res Ctr, Shenzhen, Peoples R China
关键词
DFT; 2D-GaAs; transition metal atom; magneto-electronics; MAE;
D O I
10.1088/1361-648X/abe077
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Using relativistic density-functional calculations, we examine the magneto-crystalline anisotropy and exchange properties of transition-metal atoms adsorbed on 2D-GaAs. We show that single Mn and Mo atom (Co and Os) strongly bind on 2D-GaAs, and induce local out-of-plane (in-plane) magnetic anisotropy. When a pair of TM atoms is adsorbed on 2D-GaAs in a close range from each other, magnetisation properties change (become tunable) with respect to concentrations and ordering of the adatoms. In all cases, we reveal presence of strong Dzyaloshinskii-Moriya interaction. These results indicate novel pathways towards two-dimensional chiral magnetic materials by design, tailored for desired applications in magneto-electronics.
引用
收藏
页数:10
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