Low temperature operation of 0.13 μm Partially-Depleted SOI nMOSFETs with floating body

被引：1
|
作者：
Pavanello, MA
Martino, JA
Mercha, A
Rafi, JM
Simoen, E
Claeys, C
van Meer, H
De Meyer, K
机构：
[1] Univ Sao Paulo, Lab Sistemas Integraveis, BR-05508900 Sao Paulo, Brazil
[2] State Univ Campinas, Ctr Semicond Components, Campinas, Brazil
[3] IMEC, B-3001 Louvain, Belgium
[4] Katholieke Univ Leuven, EE Dept, B-3001 Louvain, Belgium
来源：
JOURNAL DE PHYSIQUE IV | 2002年 / 12卷 / PR3期
关键词：
D O I：
10.1051/jp420020032
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
An extended low temperature study of 0.13mum Partially-Depleted Silicon-On-Insulator nMOSFETs without body contact is carried out. The impact of HALO doping characteristics on device output performance is investigated. The electrical properties of the technology are explored in terms of circuit applications both in digital and analog sense, The occurrence of inherent parasitic bipolar effects is also studied.
引用
收藏
页码：31 / 34
页数：4
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