Effect of near surface inverse doping on graphene silicon heterojunction solar cell

被引：6
|
作者：
Kuang, Yawei [1 ,2 ,3 ]
Zhang, Debao [2 ]
Ma, Yulong [2 ]
Liu, Yushen [2 ]
Shao, Zhenguang [2 ]
Hong, Xuekun [2 ]
Yang, Xifeng [2 ]
Feng, Jinfu [2 ]
机构：
[1] Changzhou Univ, Jiangsu Prov Cultivat Base State Key Lab Photovol, Changzhou 213164, Peoples R China
[2] Changshu Inst Technol, Sch Phys & Elect Engn, Changshu 215500, Peoples R China
[3] Zhejiang Univ, Ctr Opt & Electromagnet Res, Hangzhou 310058, Zhejiang, Peoples R China
来源：
OPTICAL AND QUANTUM ELECTRONICS | 2016年 / 48卷 / 03期
基金：
中国国家自然科学基金;
关键词：
Graphene; Schottky solar cell; Inverse doping; INFRARED PHOTODETECTORS; HEIGHT; SIMULATION; VOLTAGE; DIODE; LAYER;
D O I：
10.1007/s11082-016-0471-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Two dimensional model of graphene silicon heterojunction solar cell with an inverse doped surface layer is structured using Silvaco TCAD tools by accurate control of ion implantation parameters such as ion beam energy and implantation dose. The I-V characteristics show that the performance of solar cell strongly depends on the inverse layer and doping concentrations. Due to the increase of effective barrier height, the collecting rate of minority carrier generated deep in silicon crystal is enhanced, which is shown by hole current density distribution at Y direction and evidenced by IQE analyses. The obtained maximum efficiency is 0.7332 % at implantation dose of 1e15 cm (2), which is improved significantly compared with normal structure.
引用
收藏
页码：1 / 9
页数：9
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