Effect of near surface inverse doping on graphene silicon heterojunction solar cell

Two dimensional model of graphene silicon heterojunction solar cell with an inverse doped surface layer is structured using Silvaco TCAD tools by accurate control of ion implantation parameters such as ion beam energy and implantation dose. The I-V characteristics show that the performance of solar cell strongly depends on the inverse layer and doping concentrations. Due to the increase of effective barrier height, the collecting rate of minority carrier generated deep in silicon crystal is enhanced, which is shown by hole current density distribution at Y direction and evidenced by IQE analyses. The obtained maximum efficiency is 0.7332 % at implantation dose of 1e15 cm (2), which is improved significantly compared with normal structure.