Growth of epitaxial (Ba0.5,Sr0.5)TiO3 thin films on silicon with a thin buffer layer

被引：0
|
作者：
Jun, SJ [1 ]
Lee, J [1 ]
机构：
[1] Sungkyunkwan Univ, Dept Mat Engn, Suwon 440746, South Korea
来源：
FERROELECTRICS | 2002年 / 271卷
关键词：
epitaxial perovskite; (Ba; Sr)TiO3; YSZ; buffer layer;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Epitaxial (Ba-0.5,Sr-0.5)TiO3 (BST) thin films have been grown on Si substrate with a very thin yttria-stabilized zirconia (YSZ) buffer layer by pulsed-laser deposition. In these BST/YSZ heteroepitaxial structures, the axial relationship was BST[h00]//YSZ[h00]//Si[h00]. Crystallinity of an epitaxial BST films has been investigated using X-ray diffraction study and Phi-scan. The thickness of YSZ buffer layer affects the growth behavior of BST thin films. It is with very thin YSZ buffer layer, under 7 nm thick, that BST thin film is grown epitaxially on Si substrate.
引用
收藏
页码：1611 / 1616
页数：6
相关论文
共 50 条
  • [1] Fabrication and characterization of (110)-oriented (Ba0.5,Sr0.5)TiO3 thin films using PdO//Pd buffer layer
    Oshima, Naoya
    Uchiyama, Kiyoshi
    Ehara, Yoshitaka
    Oikawa, Takahiro
    Tanaka, Hiroki
    Sato, Tomoya
    Uchida, Hiroshi
    Yamada, Tomoaki
    Funakubo, Hiroshi
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (10)
  • [2] Evolution of Low Symmetric Phase in Strained Epitaxial (Ba0.5, Sr0.5)TiO3 Thin Films Grown on Si
    Jun, Sungjin
    Eom, Ki Tae
    Yang, Cheol-Woong
    Kim, Sang Sub
    Lee, Jaichan
    [J]. SCIENCE OF ADVANCED MATERIALS, 2015, 7 (08) : 1510 - 1514
  • [3] Electrical properties of the mos structures using strained (Ba0.5,Sr0.5)TiO3 thin films
    Jun, S
    Roh, Y
    Lee, J
    [J]. FERROELECTRICS, 2001, 259 (1-4) : 269 - 275
  • [4] Large reduction of leakage current by graded-layer La doping in (Ba0.5, Sr0.5)TiO3 thin films
    Saha, S
    Krupanidhi, SB
    [J]. APPLIED PHYSICS LETTERS, 2001, 79 (01) : 111 - 113
  • [5] Electrical conduction mechanism in high-dielectric-constant (Ba0.5,Sr0.5)TiO3 thin films
    Chang, ST
    Lee, JM
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (04) : 655 - 657
  • [6] (BA0.5,SR0.5)TIO3, THIN-FILM PREPARATION BY RF MAGNETRON SPUTTERING AND ITS ELECTRIC PROPERTIES
    YOON, SG
    SAFARI, A
    [J]. THIN SOLID FILMS, 1995, 254 (1-2) : 211 - 215
  • [7] Influence of oxygen pressure during deposition on the microwave dielectric tunability of Ba0.5 Sr0.5 TiO3 thin films in PLD process
    Raman, T. S. Akhil
    Arun, B.
    Shivakumar, C.
    Joseph, Andrews
    Raju, K. C. James
    [J]. APPLIED SURFACE SCIENCE, 2024, 669
  • [8] Structural characterization of strained (Ba0.5,Sr0.5)TiO3 thin films grown on Si by synchrotron X-ray diffraction
    Jun, SJ
    Kim, SS
    Je, JH
    Lee, JC
    [J]. INTEGRATED FERROELECTRICS, 2001, 38 (1-4) : 845 - 854
  • [9] First-principles study of ordered structures in Ba0.5 Sr0.5 TiO3
    He Jian-Ping
    Lu Wen-Zhong
    Wang Xiao-Hong
    [J]. ACTA PHYSICA SINICA, 2011, 60 (09)
  • [10] Enhanced Characterizations of rf-Magnetron Sputtered BiFeO3 Thin Film Using (Ba0.5, Sr0.5)TiO3 Buffered Layer
    Lee, Chia-Ching
    Wang, Chen-Chan
    Chen, Shih-Wei
    Lee, Yi-Hsien
    Liang, Chun-Sheng
    Chou, Fang-Chen
    Wu, Jenn-Ming
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (11) : G231 - G235
12345