Growth of epitaxial (Ba0.5,Sr0.5)TiO3 thin films on silicon with a thin buffer layer

被引：0
|
作者：
Jun, SJ [1 ]
Lee, J [1 ]
机构：
[1] Sungkyunkwan Univ, Dept Mat Engn, Suwon 440746, South Korea
来源：
FERROELECTRICS | 2002年 / 271卷
关键词：
epitaxial perovskite; (Ba; Sr)TiO3; YSZ; buffer layer;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Epitaxial (Ba-0.5,Sr-0.5)TiO3 (BST) thin films have been grown on Si substrate with a very thin yttria-stabilized zirconia (YSZ) buffer layer by pulsed-laser deposition. In these BST/YSZ heteroepitaxial structures, the axial relationship was BST[h00]//YSZ[h00]//Si[h00]. Crystallinity of an epitaxial BST films has been investigated using X-ray diffraction study and Phi-scan. The thickness of YSZ buffer layer affects the growth behavior of BST thin films. It is with very thin YSZ buffer layer, under 7 nm thick, that BST thin film is grown epitaxially on Si substrate.
引用
收藏
页码：1611 / 1616
页数：6
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