Enhanced Characterizations of rf-Magnetron Sputtered BiFeO3 Thin Film Using (Ba0.5, Sr0.5)TiO3 Buffered Layer

被引：0

作者：

Lee, Chia-Ching ^{[1
]}

Wang, Chen-Chan ^{[2
]}

Chen, Shih-Wei ^{[2
]}

Lee, Yi-Hsien ^{[3
]}

Liang, Chun-Sheng ^{[2
]}

Chou, Fang-Chen ^{[1
]}

Wu, Jenn-Ming ^{[2
]}

机构：

[1] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 10617, Taiwan

[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

[3] Acad Sinica, Inst Phys, Taipei 15529, Taiwan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2011年 / 158卷 / 11期

关键词：

FERROELECTRIC PROPERTIES; ELECTRICAL-PROPERTIES; RETENTION; THICKNESS; FATIGUE;

D O I：

10.1149/2.024111jes

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

BiFeO3(BFO) and (Ba-0.5, Sr-0.5) TiO3(BST)-buffered BFO capacitors were deposited on Pt/Ti/SiO2/Si(100) substrates. The effect of the thickness of the BST buffer layer, which varied from 5 to 15 nm, and the structures and electrical properties were investigated. The structures, morphologies, and leakage currents are enhanced by the insertion of a BST buffer layer. As BST film thickness increases, the remnant polarizations (Pr) decreases and the polarization-electrical field (P-E) hysteresis curve changes. Retention properties were obtained only on BST-buffered BFO. In terms of retention behaviors, we found a more stretched exponential law dominated region during retention times with increasing BST film thickness. Attractive retention values of BST-buffered BFO are also shown. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.024111jes] All rights reserved.

引用

页码：G231 / G235

页数：5

共 50 条

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