Anomalous temperature dependence of electrical transport in quantum Hall multilayers

被引：6
|
作者：
Walling, HA [1 ]
Dougherty, DP
Druist, DP
Gwinn, EG
Maranowski, KD
Gossard, AC
机构：
[1] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
来源：
PHYSICAL REVIEW B | 2004年 / 70卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.70.045312
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We study the temperature dependence of vertical transport through the chiral sheath of surface states that exists near the sidewalls of GaAs/Al0.01Ga0.09As multilayer structures in the regime of the integer quantum Hall effect. Because variable-range hopping through the bulk provides a parallel conduction channel, we design our experiment to extend the temperature range of sheath-dominated transport. To do so, we increase device perimeter by using fractal-perimeter mesas. We report on the nearly linear increase of the sheath conductivity with temperature, a result not predicted by existing theories for the edge state sheath.
引用
收藏
页码：045312 / 1
页数：5
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