Temperature dependence of the anomalous hall effect in ferromagnetic (Ga,Mn)As epilayers

被引：0

作者：

Kim, YS ^{[1
]}

Choi, HK

Khim, ZG

Woo, JC

Park, YD

Chun, SH

机构：

[1] Sejong Univ, Dept Phys, Seoul 143747, South Korea

[2] Seoul Natl Univ NS50, Sch Phys, Seoul 151747, South Korea

[3] Seoul Natl Univ NS53, Ctr Strongly Correlated Mat Res, Seoul 151, South Korea

[4] Korea Inst Sci & Technol, Future Technol Res Div, Seoul 136791, South Korea

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3 | 2006年 / 3卷 / 03期

关键词：

D O I：

10.1002/pssc.200564144

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We fabricated high quality (Ga,Mn)As epilayers by low-temperature molecular beam epitaxy and studied the magnetic and magneto-transport properties in detail. In particular, we investigated the relation between the longitudinal and the transverse Hall resistivity over a wide range of temperatures. It turned out that the anomalous Hall coefficient scaled linearly with the longitudinal resistivity, which seems to imply that the skew scattering is the primary source of the anomalous Hall effect in (Ga,Mn)As if we consider classical models only. However, we cannot rule out other mechanisms because of the narrow range of resistivity investigated. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：697 / +

页数：2

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