Temperature dependence of the anomalous hall effect in ferromagnetic (Ga,Mn)As epilayers

被引：0
|
作者：
Kim, YS [1 ]
Choi, HK
Khim, ZG
Woo, JC
Park, YD
Chun, SH
机构：
[1] Sejong Univ, Dept Phys, Seoul 143747, South Korea
[2] Seoul Natl Univ NS50, Sch Phys, Seoul 151747, South Korea
[3] Seoul Natl Univ NS53, Ctr Strongly Correlated Mat Res, Seoul 151, South Korea
[4] Korea Inst Sci & Technol, Future Technol Res Div, Seoul 136791, South Korea
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3 | 2006年 / 3卷 / 03期
关键词：
D O I：
10.1002/pssc.200564144
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We fabricated high quality (Ga,Mn)As epilayers by low-temperature molecular beam epitaxy and studied the magnetic and magneto-transport properties in detail. In particular, we investigated the relation between the longitudinal and the transverse Hall resistivity over a wide range of temperatures. It turned out that the anomalous Hall coefficient scaled linearly with the longitudinal resistivity, which seems to imply that the skew scattering is the primary source of the anomalous Hall effect in (Ga,Mn)As if we consider classical models only. However, we cannot rule out other mechanisms because of the narrow range of resistivity investigated. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：697 / +
页数：2
相关论文
共 50 条
  • [41] Enhancement of the Curie temperature of ferromagnetic semiconductor (Ga,Mn)As
    HaiLong Wang
    Lin Chen
    JianHua Zhao
    Science China Physics, Mechanics and Astronomy, 2013, 56 : 99 - 110
  • [42] Transition from Anomalous Hall Effect to Topological Hall Effect in Hexagonal Non-Collinear Magnet Mn3Ga
    Liu, Z. H.
    Zhang, Y. J.
    Liu, G. D.
    Ding, B.
    Liu, E. K.
    Jafri, Hasnain Mehdi
    Hou, Z. P.
    Wang, W. H.
    Ma, X. Q.
    Wu, G. H.
    SCIENTIFIC REPORTS, 2017, 7
  • [43] Transition from Anomalous Hall Effect to Topological Hall Effect in Hexagonal Non-Collinear Magnet Mn3Ga
    Z. H. Liu
    Y. J. Zhang
    G. D. Liu
    B. Ding
    E. K. Liu
    Hasnain Mehdi Jafri
    Z. P. Hou
    W. H. Wang
    X. Q. Ma
    G. H. Wu
    Scientific Reports, 7
  • [44] Magnetic phase dependence of the anomalous Hall effect in Mn3Sn single crystals
    Sung, N. H.
    Ronning, F.
    Thompson, J. D.
    Bauer, E. D.
    APPLIED PHYSICS LETTERS, 2018, 112 (13)
  • [45] (Ga,Mn)N:Sn epilayers
    Kondo, T
    Owa, H
    Munekata, H
    JOURNAL OF SUPERCONDUCTIVITY, 2003, 16 (01): : 103 - 106
  • [46] High-Temperature Anomalous Hall Effect in a Transition Metal Dichalcogenide Ferromagnetic Insulator Heterostructure
    Ng, Sheung Mei
    Wang, Huichao
    Liu, Yukuai
    Wong, Hon Fai
    Yau, Hei Man
    Suen, Chun Hung
    Wu, Ze Han
    Leung, Chi Wah
    Dai, Ji-Yan
    ACS NANO, 2020, 14 (06) : 7077 - 7084
  • [47] Two-Dimensional Room-Temperature Ferromagnetic Semiconductors with Quantum Anomalous Hall Effect
    You, Jing-Yang
    Zhang, Zhen
    Gu, Bo
    Su, Gang
    PHYSICAL REVIEW APPLIED, 2019, 12 (02):
  • [48] Anomalous Hall effect governed by electron doping in a room-temperature transparent ferromagnetic semiconductor
    Hidemi Toyosaki
    Tomoteru Fukumura
    Yasuhiro Yamada
    Kiyomi Nakajima
    Toyohiro Chikyow
    Tetsuya Hasegawa
    Hideomi Koinuma
    Masashi Kawasaki
    Nature Materials, 2004, 3 : 221 - 224
  • [49] Anomalous Hall effect governed by electron doping in a room-temperature transparent ferromagnetic semiconductor
    Toyosaki, H
    Fukumura, T
    Yamada, Y
    Nakajima, K
    Chikyow, T
    Hasegawa, T
    Koinuma, H
    Kawasaki, M
    NATURE MATERIALS, 2004, 3 (04) : 221 - 224
  • [50] (Ga,Mn)N : Sn Epilayers
    T. Kondo
    H. Owa
    H. Munekata
    Journal of Superconductivity, 2003, 16 : 103 - 106
12345