Low-resistance Ti/Al ohmic contact on undoped ZnO

被引：0

作者：

Kim, SY ^{[1
]}

Jang, HW ^{[1
]}

Kim, JK ^{[1
]}

Jeon, CM ^{[1
]}

Park, WI ^{[1
]}

Yi, GC ^{[1
]}

Lee, JL ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2002年 / 31卷 / 08期

关键词：

ZnO; ohmic contact; photoemission spectroscopy;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a low-resistance ohmic contact on undoped ZnO using a promising contact scheme of Ti/Al. Specific-contact resistivity, as low as 9.0 x 10(-7) Omegacm(2), was obtained from the Ti(300 Angstrom)/Al(3,000 Angstrom) contact annealed at 300degreesC. It was found that TiO was produced, and the atomic ratio of Zn/O was dramatically increased after annealing at 300degreesC. This provides the evidence that a number of oxygen vacancies, acting as donors for electrons, were produced below the contact. This leads to the increase of electron concentration via the reduction of contact resistivity.

引用

页码：868 / 871

页数：4

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