Simulation of Water Photo Electrolysis with III-Nitride Semiconductor Nano Wires

被引：0
|
作者：
Witzigmann, Bernd [1 ]
Bettenhausen, Maximilian [1 ]
Mewes, Marvin [1 ]
Fuele, Heiko [1 ]
Roemer, Friedhard [1 ]
机构：
[1] Univ Kassel, Computat Elect & Photon Grp, D-34121 Kassel, Germany
来源：
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XXII | 2014年 / 8980卷
关键词：
Simulation; Nano Wire; Gallium Nitride; Water Splitting; Energy Harvesting;
D O I：
10.1117/12.2041230
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Water splitting under illumination with a GaN/InGaN planar and nano wire structure is modeled using a drift-diffusion approach. The main features of the experiment such as current density without biasing and current saturation effects are explained by the simulation. The electrolyte where ionic transport occurs is modeled as material with diffusion coefficients matching ionic diffusivity experiments. The simulation allows design and analysis of GaN based nano structures and their water photo electrolysis efficiency.
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页数：6
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