Simulation of Water Photo Electrolysis with III-Nitride Semiconductor Nano Wires

被引：0

作者：

Witzigmann, Bernd ^{[1
]}

Bettenhausen, Maximilian ^{[1
]}

Mewes, Marvin ^{[1
]}

Fuele, Heiko ^{[1
]}

Roemer, Friedhard ^{[1
]}

机构：

[1] Univ Kassel, Computat Elect & Photon Grp, D-34121 Kassel, Germany

来源：

PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XXII | 2014年 / 8980卷

关键词：

Simulation; Nano Wire; Gallium Nitride; Water Splitting; Energy Harvesting;

D O I：

10.1117/12.2041230

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Water splitting under illumination with a GaN/InGaN planar and nano wire structure is modeled using a drift-diffusion approach. The main features of the experiment such as current density without biasing and current saturation effects are explained by the simulation. The electrolyte where ionic transport occurs is modeled as material with diffusion coefficients matching ionic diffusivity experiments. The simulation allows design and analysis of GaN based nano structures and their water photo electrolysis efficiency.

引用

页数：6

共 50 条

[11] III-Nitride semiconductor growth by MBE:: Recent issues
Morkoç, H
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2001, 12 (12) : 677 - 695
[12] Monte Carlo simulation of III-nitride photocathodes
Marini, Jonathan
Bell, L. D.
Shahedipour-Sandvik, F.
JOURNAL OF APPLIED PHYSICS, 2018, 123 (12)
[13] III-nitride semiconductor membrane electronics and optoelectronics for heterogeneous integration
Chen, Renfeng
Song, Yijian
He, Rui
Wang, Junxi
Li, Jinmin
Wei, Tongbo
PROGRESS IN QUANTUM ELECTRONICS, 2024, 98
[14] Strain states in semipolar III-nitride semiconductor quantum wells
Funato, M.
Inoue, D.
Ueda, M.
Kawakami, Y.
Narukawa, Y.
Mukai, T.
JOURNAL OF APPLIED PHYSICS, 2010, 107 (12)
[15] Design and simulation of a III-Nitride light emitting transistor
Awwad, Mohammad
Rahman, Sheikh Ifatur
Joishi, Chandan
McGlone, Joe
Anderson, Betty Lise
Rajan, Siddharth
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2024, 39 (11)
[16] III-nitride ultraviolet micro- and nano-photonics
Lin, JY
Jiang, HX
2005 CONFERENCE ON LASERS & ELECTRO-OPTICS (CLEO), VOLS 1-3, 2005, : 1441 - 1443
[17] III-nitride nano-LEDs for single photon lithography
Trellenkamp, St.
Mikulics, M.
Winden, A.
Arango, Y. C.
Moers, J.
Marso, M.
Gruetzmacher, D.
Hardtdegen, H.
2014 10TH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES & MICROSYSTEMS (ASDAM), 2014, : 85 - 88
[18] Gd-Doped III-Nitride Dilute Magnetic Semiconductor Materials
Davies, R. P.
Ivill, M.
Hite, J. K.
Gila, B. P.
Thaler, G. T.
Abernathy, C. R.
Pearton, S. J.
Stanton, C. J.
Zavada, J. M.
RARE-EARTH DOPING OF ADVANCED MATERIALS FOR PHOTONIC APPLICATIONS, 2009, 1111 : 77 - 84
[19] Rare-earth doped III-nitride semiconductors for semiconductor spintronics
Asahi, Hajime
Hasegawa, Shigehiko
Zhou, Yi-Kai
Emura, Shuichi
JOURNAL OF LUMINESCENCE, 2012, 132 (12) : 3136 - 3140
[20] A COMPOSITE SEMICONDUCTOR PHOTO-ANODE FOR WATER ELECTROLYSIS
NAKATO, Y
TAKAMORI, N
TSUBOMURA, H
NATURE, 1982, 295 (5847) : 312 - 313

← 1 2 3 4 5 →