The dynamic response analysis of a pyroelectric thin-film infrared sensor with thermal isolation improvement structure

被引:6
|
作者
Ho, JJ [1 ]
Fang, YK
Lee, WJ
Chen, FY
Hsieh, WT
Ting, SF
Ju, MS
Huang, SB
Wu, KH
Chen, CY
机构
[1] Fortune Inst Technol, Dept Elect Engn, Chishan Town, Kaohsiung, Taiwan
[2] Chunghwa Telecom Co Ltd, Tainan, Taiwan
[3] Natl Cheng Kung Univ, Dept Elect Engn, VLSI Technol Lab, Tainan, Taiwan
[4] Natl Cheng Kung Univ, Dept Mech Engn, Man Machine Syst Lab, Tainan, Taiwan
[5] Chien Kuo Inst Technol & Commerce, Dept Elect Engn, Changsha, Peoples R China
[6] So Taiwan Univ Technol, Dept Elect Engn, Yung Kung City, Tainan, Taiwan
关键词
etching process; pyro/MEMS structure; thermal behavior; thin-film IR sensor;
D O I
10.1109/16.808059
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Both thoretical and experimental studies of the substrate effect on the thermal behavior of a PbTiO3 infrared (IR) sensor have been reported. With active cantilever dimensions of 200 x 100 x 5 mu m(3) formed by etching processes, the pyroelectric micro-electro-mechanical system (pyro/MEMS) structure exhibits a much superior performance to that of a traditional IR-sensing bulk structure under the 800-mu W incident optical light with wavelength of 970 nm, Two-order improvement in current responsivity is obtained for the pyro/MEMS structure. This shows the substrate effect on the performance of a pyro/MEMS IR sensor is very significant. A simple model has also been proposed to illustrate the substrate effect more comprehensively.
引用
收藏
页码:2289 / 2294
页数:6
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