Study of GaN-Based LEDs With Hybrid SiO2 Microsphere/Nanosphere AntiReflection Coating as a Passivation Layer by a Rapid Convection Deposition

被引：15

作者：

Hsu, Chi-Hsiang ^{[1
]}

Chan, Yi-Chun ^{[1
]}

Chen, Wei-Cheng ^{[1
]}

Chang, Ching-Hong ^{[1
,4
]}

Liou, Jian-Kai ^{[1
]}

Cheng, Shiou-Ying ^{[2
]}

Guo, Der-Feng ^{[3
]}

Liu, Wen-Chau ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan

[2] Natl Ilan Univ, Dept Elect Engn, Yilan 260, Taiwan

[3] Chinese Air Force Acad, Dept Elect Engn, Kaohsiung 820, Taiwan

[4] Chaoyang Univ Technol, Dept Comp Sci & Informat Engn, Taichung, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 03期

关键词：

Antireflection coating; GaN; light-emitting diode (LED); microsphere/nanosphere; rapid convection deposition (RCD); LIGHT-EMITTING-DIODES; EXTRACTION EFFICIENCY; JUNCTION-TEMPERATURE; SURFACE; PERFORMANCE; FABRICATION; IMPROVEMENT;

D O I：

10.1109/TED.2017.2657659

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A hybrid SiO2 micro/nanospheres antireflection coating, deposited by a rapid convection deposition, acting as a passivation layer of GaN-based light-emitting diodes (LEDs) is studied in this paper. Since the critical angle could be enlarged by antireflection coating, Fresnel reflection could be reduced. In addition, due to the roughened surface of hybrid SiO2 microsphere/nanosphere antireflection coating, the scattering effect could be increased. Thus, the light extraction efficiency could be further enhanced. As compared with a conventional LED (device A), at 20 mA, the studied device C exhibits 18.7% enhancement in light output power without any degradation of electrical properties. Reduced leakage current could also be achieved. Therefore, the use of hybrid SiO2 microsphere/nanosphere antireflection coating could effectively improve the performance of GaN-based LEDs.

引用

页码：1134 / 1139

页数：6

共 42 条

[41] Ultra high-sensitive, prompt response and recovering Pt/(Pt plus SiO2) cermet layer/GaN-based hydrogen sensor for life-saving applications
Bellamkonda, V. S. Santhosh N. Varma.
Mohan Arora, Brij
Pudi, Seshasainadh
Bhunia, Swagata
Laha, Apurba
NANOTECHNOLOGY, 2020, 31 (46)
[42] High-performance GaN-based light-emitting diodes on patterned sapphire substrate with a novel hybrid Ag mirror and atomic layer deposition-TiO2/Al2O3 distributed Bragg reflector backside reflector
Guo, Hao
Chen, Hongjun
Zhang, Xiong
Zhang, Peiyuan
Liu, Jianjun
Liu, Honggang
Cui, Yiping
OPTICAL ENGINEERING, 2013, 52 (06)

← 1 2 3 4 5 →