Study of GaN-Based LEDs With Hybrid SiO2 Microsphere/Nanosphere AntiReflection Coating as a Passivation Layer by a Rapid Convection Deposition

被引：15
|
作者：
Hsu, Chi-Hsiang [1 ]
Chan, Yi-Chun [1 ]
Chen, Wei-Cheng [1 ]
Chang, Ching-Hong [1 ,4 ]
Liou, Jian-Kai [1 ]
Cheng, Shiou-Ying [2 ]
Guo, Der-Feng [3 ]
Liu, Wen-Chau [1 ]
机构：
[1] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan
[2] Natl Ilan Univ, Dept Elect Engn, Yilan 260, Taiwan
[3] Chinese Air Force Acad, Dept Elect Engn, Kaohsiung 820, Taiwan
[4] Chaoyang Univ Technol, Dept Comp Sci & Informat Engn, Taichung, Taiwan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 03期
关键词：
Antireflection coating; GaN; light-emitting diode (LED); microsphere/nanosphere; rapid convection deposition (RCD); LIGHT-EMITTING-DIODES; EXTRACTION EFFICIENCY; JUNCTION-TEMPERATURE; SURFACE; PERFORMANCE; FABRICATION; IMPROVEMENT;
D O I：
10.1109/TED.2017.2657659
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A hybrid SiO2 micro/nanospheres antireflection coating, deposited by a rapid convection deposition, acting as a passivation layer of GaN-based light-emitting diodes (LEDs) is studied in this paper. Since the critical angle could be enlarged by antireflection coating, Fresnel reflection could be reduced. In addition, due to the roughened surface of hybrid SiO2 microsphere/nanosphere antireflection coating, the scattering effect could be increased. Thus, the light extraction efficiency could be further enhanced. As compared with a conventional LED (device A), at 20 mA, the studied device C exhibits 18.7% enhancement in light output power without any degradation of electrical properties. Reduced leakage current could also be achieved. Therefore, the use of hybrid SiO2 microsphere/nanosphere antireflection coating could effectively improve the performance of GaN-based LEDs.
引用
收藏
页码：1134 / 1139
页数：6
相关论文
共 42 条
  • [31] Nearly white-light emission from GaN-based light-emitting diodes integrated with a porous SiO2 layer
    Hsieh, Chih-Hao
    Ke, Min-Yung
    Shih, Ghien-An
    Chiu, Tzu-Yang
    Huang, Jian Jang
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2007, 19 (9-12) : 662 - 664
  • [32] High performance GaN-based LEDs on patterned sapphire substrate with patterned composite SiO2/Al2O3 passivation layers and TiO2/Al2O3 DBR backside reflector
    Guo, Hao
    Zhang, Xiong
    Chen, Hongjun
    Zhang, Peiyuan
    Liu, Honggang
    Chang, Hudong
    Zhao, Wei
    Liao, Qinghua
    Cui, Yiping
    OPTICS EXPRESS, 2013, 21 (18): : 21456 - 21465
  • [33] Light Extraction Efficiency Enhancement of GaN-Based Light Emitting Diodes on n-GaN Layer Using a SiO2 Photonic Quasi-Crystal Overgrowth
    Huang, H. W.
    Lee, K. Y.
    Huang, J. K.
    Lin, C. H.
    Lin, C. F.
    Yu, C. C.
    Kuo, H. C.
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2010, 10 (10) : 6363 - 6368
  • [34] Improving the output power of GaN-based light-emitting diode using Ag particles embedded within a SiO2 current blocking layer
    Park, Jae-Seong
    Han, Jaecheon
    Seong, Tae-Yeon
    SUPERLATTICES AND MICROSTRUCTURES, 2015, 83 : 361 - 366
  • [35] An Improved GaN-Based Light-Emitting Diode with a SiO2 Current Blocking Layer Embedded in Stair-Like AZO Transparent Structure
    Liou, Syuan-Hao
    Tsai, Jung-Hui
    Liu, Wen-Chau
    Lin, Pao-Sheng
    Chen, Yu-Chi
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2017, 6 (10) : R149 - R153
  • [36] Light-Output-Power Enhancement of GaN-Based Light-Emitting Diodes on an n-GaN Layer Using a SiO2 Photonic Quasi-Crystal Overgrowth
    Huang, H. W.
    Huang, J. K.
    Lee, K. Y.
    Lin, C. F.
    Kuo, H. C.
    IEEE ELECTRON DEVICE LETTERS, 2010, 31 (06) : 573 - 575
  • [37] Study of a GaN-Based Light-Emitting Diode With a Ga2O3 Current Blocking Layer and a Ga2O3 Surface Passivation Layer
    Hsu, Ching-Chuan
    Hou, Yan-Ren
    Niu, Jing-Shiuan
    Liu, Wen-Chau
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (08) : 3894 - 3900
  • [38] Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO2 on Al-doped ZnO transparent conductive layer
    Zhao, Yu
    Fan, Bingfeng
    Chen, Yiting
    Zhuo, Yi
    Pang, Zhoujun
    Liu, Zhen
    Wang, Gang
    CHINESE PHYSICS B, 2016, 25 (07)
  • [39] Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO2 on Al-doped ZnO transparent conductive layer
    招瑜
    范冰丰
    陈义廷
    卓毅
    庞洲骏
    刘振
    王钢
    Chinese Physics B, 2016, (07) : 557 - 560
  • [40] Improved light output of GaN-based vertical light emitting diodes using SiO2 nanotube arrays and transparent metal oxide current conduction layer
    Wang, Shui-Jinn
    Wang, Pei-Ren
    Kuo, Der-Ming
    Kuo, Hsiun-Rong
    Kuo, Jian-Shian
    APPLIED PHYSICS LETTERS, 2011, 99 (13)
12345