Structural and electrical characterization of high-k strontium tantalate deposited by liquid delivery MOCVD

被引：5

作者：

Silinskas, M.

Lisker, M.

Burte, E. P.

Veit, P.

机构：

[1] Univ Magdeburg, Inst Micro & Sensor Syst, D-39106 Magdeburg, Germany

[2] Univ Magdeburg, Inst Expt Phys, D-39106 Magdeburg, Germany

来源：

INTEGRATED FERROELECTRICS | 2006年 / 86卷 / 01期

关键词：

SrTa2O6; MOCVD; high-k; TEM; XRD; dielectric constant; leakage current;

D O I：

10.1080/10584580601085636

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The strontium tantalate films were prepared by metalorganic chemical vapor deposition using Sr[Ta(OEt)(5)(OC2H4OMe)](2) precursor. Transmission electron microscopy, X-ray diffraction, and ellipsometry indicated that the as-deposited and the annealed at 800 degrees C films were uniform and amorphous. Significant crystallization takes place only at temperatures of similar to 1000 degrees C and these films are unhomogeneous and the thickness of the interlayer SiO2 highly increases. Annealing at temperatures about 800 degrees C was found to improve the electrical characteristics ( effective dielectric constant up to 40, the leakage current up to 7(.)10(-8) A/cm(-2), and low interface state density value of 8(.)10(10) eV(-1) cm(-2)).

引用

页码：31 / 39

页数：9

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