Structural and electrical characterization of high-k strontium tantalate deposited by liquid delivery MOCVD

被引：5
|
作者：
Silinskas, M.
Lisker, M.
Burte, E. P.
Veit, P.
机构：
[1] Univ Magdeburg, Inst Micro & Sensor Syst, D-39106 Magdeburg, Germany
[2] Univ Magdeburg, Inst Expt Phys, D-39106 Magdeburg, Germany
来源：
INTEGRATED FERROELECTRICS | 2006年 / 86卷 / 01期
关键词：
SrTa2O6; MOCVD; high-k; TEM; XRD; dielectric constant; leakage current;
D O I：
10.1080/10584580601085636
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The strontium tantalate films were prepared by metalorganic chemical vapor deposition using Sr[Ta(OEt)(5)(OC2H4OMe)](2) precursor. Transmission electron microscopy, X-ray diffraction, and ellipsometry indicated that the as-deposited and the annealed at 800 degrees C films were uniform and amorphous. Significant crystallization takes place only at temperatures of similar to 1000 degrees C and these films are unhomogeneous and the thickness of the interlayer SiO2 highly increases. Annealing at temperatures about 800 degrees C was found to improve the electrical characteristics ( effective dielectric constant up to 40, the leakage current up to 7(.)10(-8) A/cm(-2), and low interface state density value of 8(.)10(10) eV(-1) cm(-2)).
引用
收藏
页码：31 / 39
页数：9
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