Method to determine the sticking coefficient of precursor molecules in atomic layer deposition

被引：37
|
作者：
Rose, M. [1 ]
Bartha, J. W. [2 ]
机构：
[1] Fraunhofer IKTS, D-01277 Dresden, Germany
[2] Tech Univ Dresden, Dept Elect Engn & Informat Technol, IHM, D-01062 Dresden, Germany
来源：
APPLIED SURFACE SCIENCE | 2009年 / 255卷 / 13-14期
关键词：
Atomic layer deposition; Sticking coefficient; Deep trench; Simulation; Free molecular flow; Surface chemistry; CHEMICAL-VAPOR-DEPOSITION; FILMS; COVERAGE; GROWTH; HOLES;
D O I：
10.1016/j.apsusc.2009.02.055
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A method to determine the sticking coefficient of precursor molecules used in atomic layer deposition (ALD) will be introduced. The sticking coefficient is an interesting quantity for comparing different ALD processes and reactors but it cannot be observed easily. The method relies on free molecular flow in nanoscale cylindrical holes. The sticking coefficient is determined for tetrakis(dimethylamino) titanium in combination with ozone. The proposed method can be applied independent of the type of reactor, precursor delivery system and precursors. (C) 2009 Elsevier B. V. All rights reserved.
引用
收藏
页码：6620 / 6623
页数：4
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