Method to determine the sticking coefficient of precursor molecules in atomic layer deposition

被引：37

作者：

Rose, M. ^{[1
]}

Bartha, J. W. ^{[2
]}

机构：

[1] Fraunhofer IKTS, D-01277 Dresden, Germany

[2] Tech Univ Dresden, Dept Elect Engn & Informat Technol, IHM, D-01062 Dresden, Germany

来源：

APPLIED SURFACE SCIENCE | 2009年 / 255卷 / 13-14期

关键词：

Atomic layer deposition; Sticking coefficient; Deep trench; Simulation; Free molecular flow; Surface chemistry; CHEMICAL-VAPOR-DEPOSITION; FILMS; COVERAGE; GROWTH; HOLES;

D O I：

10.1016/j.apsusc.2009.02.055

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A method to determine the sticking coefficient of precursor molecules used in atomic layer deposition (ALD) will be introduced. The sticking coefficient is an interesting quantity for comparing different ALD processes and reactors but it cannot be observed easily. The method relies on free molecular flow in nanoscale cylindrical holes. The sticking coefficient is determined for tetrakis(dimethylamino) titanium in combination with ozone. The proposed method can be applied independent of the type of reactor, precursor delivery system and precursors. (C) 2009 Elsevier B. V. All rights reserved.

引用

页码：6620 / 6623

页数：4

共 50 条

[11] Atomic Layer Deposition of Tantalum Nitride Using A Novel Precursor
Somani, Shikha
Mukhopadhyay, Atashi
Musgrave, Charles
JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 115 (23): : 11507 - 11513
[12] Reactions of ruthenium cyclopentadienyl precursor in the metal precursor pulse of Ru atomic layer deposition
Liu, Ji
Lu, Hongliang
Zhang, David Wei
Nolan, Michael
JOURNAL OF MATERIALS CHEMISTRY C, 2021, 9 (08) : 2919 - 2932
[13] ZnO nanostructures by Atomic Layer Deposition method
Szczepanik, A.
Wachnicki, L.
Godlewski, M.
Guziewicz, E.
Kopalko, K.
Janik, E.
Lusakowska, E.
Czerwinski, A.
Pluska, M.
Yatsunenko, S. A.
NANO 2008: 2ND NATIONAL CONFERENCE ON NANOTECHNOLOGY, 2009, 146
[14] STICKING COEFFICIENT OF MOLECULAR AND ATOMIC-HYDROGEN ON PALLADIUM
DEAN, B
HAASZ, AA
STANGEBY, PC
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 2332 - 2335
[15] Atomic Layer Deposition of Ruthenium Thin Films from an Amidinate Precursor
Wang, Hongtao
Gordon, Roy G.
Alvis, Roger
Ulfig, Robert M.
CHEMICAL VAPOR DEPOSITION, 2009, 15 (10-12) : 312 - 319
[16] Modeling precursor diffusion and reaction of atomic layer deposition in porous structures
Keuter, Thomas
Menzler, Norbert Heribert
Mauer, Georg
Vondahlen, Frank
Vassen, Robert
Buchkremer, Hans Peter
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2015, 33 (01):
[17] A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films
Cao, LiAo
Mattelaer, Felix
Sajavaara, Timo
Dendooven, Jolien
Detavernier, Christophe
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2020, 38 (02):
[18] Role of a cyclopentadienyl ligand in a heteroleptic alkoxide precursor in atomic layer deposition
Yoon, Hwi
Lee, Yujin
Lee, Ga Yeon
Seo, Seunggi
Park, Bo Keun
Chung, Taek-Mo
Oh, Il-Kwon
Kim, Hyungjun
JOURNAL OF CHEMICAL PHYSICS, 2024, 160 (02):
[19] Precursor design and reaction mechanisms for the atomic layer deposition of metal films
Ramos, Karla Bernal
Saly, Mark J.
Chabal, Yves J.
COORDINATION CHEMISTRY REVIEWS, 2013, 257 (23-24) : 3271 - 3281
[20] Impact of aminosilane and silanol precursor structure on atomic layer deposition process
Li, Wenling
Cheng, Jiangong
Zheng, Zilong
Liu, Qiaohong
Geng, Feng
Yan, Hui
APPLIED SURFACE SCIENCE, 2023, 621

← 1 2 3 4 5 →