(Ba,Sr)RuO3 bottom electrode deposited by liqud delivery metalorganic chemical vapor deposition for (Ba,Sr)TiO3 high dielectric

被引:0
|
作者
Choi, ES [1 ]
Shin, WC [1 ]
Yoon, SG [1 ]
机构
[1] Chungnam Natl Univ, Dept Mat Engn, Taejon 305764, South Korea
关键词
LDMOCVD; deposition temperature; oxygen flow rate; resistivity; roughness;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Conducting perovskite oxide, (Ba,Sr)RuO3 (BSR), which has many advantages for (Ba,Sr)TiO3 (BST) due to their similarity in crystal structure, lattice constant and chemical composition, was prepared on n-type Si (100) by liquid delivery metalorganic chemical vapor deposition (LDMOCVD). The deposition characteristics of BSR were controlled by gas-phase mass-transfer in these experiments. The BSR films deposited at 500degreesC and oxygen flow rate of 100 sccm (standard cc/min) showed a average roughness of 22Angstrom and resistivity of 810 muOmega-cm. The resistivity of BSR films for variation of oxygen flow rate showed a close relationship with the roughness of films.
引用
收藏
页码:1701 / 1706
页数:6
相关论文
共 50 条
  • [31] Iridium thin film as a bottom electrode for high dielectric (Ba,Sr)TiO3 capacitors
    Cha, SY
    Jang, BT
    Kwak, DH
    Shin, CH
    Lee, HC
    INTEGRATED FERROELECTRICS, 1997, 17 (1-4) : 187 - 195
  • [32] Improvement of dielectric properties of (Ba,Sr)TiO3 thin films deposited by pulse injection chemical vapor deposition
    Cho, HJ
    Kim, HJ
    APPLIED PHYSICS LETTERS, 1998, 72 (07) : 786 - 788
  • [33] Structural stability of metallorganic chemical vapor deposited (Ba, Sr)RuO3 electrodes for integration of high dielectric constant thin films
    Choi, ES
    Choi, YS
    Yoon, SG
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2002, 149 (04) : G232 - G235
  • [34] Liquid source chemical vapor deposition of high-dielectric-constant (Ba, Sr)TiO3 films
    Kawahara, Takaaki
    Yamamuka, Mikio
    Yuuki, Akimasa
    Ono, Kouichi
    Electrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi), 1998, 125 (01): : 47 - 54
  • [35] Liquid source chemical vapor deposition of high-dielectric-constant (Ba, Sr)TiO3 films
    Kawahara, T
    Yamamuka, M
    Yuuki, A
    Ono, K
    ELECTRICAL ENGINEERING IN JAPAN, 1998, 125 (01) : 47 - 54
  • [36] Structural stability of (Ba, Sr)RuO3 electrodes on hydrogen annealing and effect of interfacial layers in (Ba,Sr)TiO3 thin films
    Choi, Eun-Suck
    Park, Sang-Shik
    Yoon, Soon-Gil
    Integrated Ferroelectrics, 2002, 47 : 31 - 40
  • [37] Thickness dependence of characteristics for (Ba, Sr)TiO3 thin films prepared by metalorganic chemical vapor deposition
    Takeshima, Yutaka
    Tanaka, Katsuhiko
    Sakabe, Yukio
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (9 B): : 5389 - 5392
  • [38] Thickness dependence of characteristics for (Ba, Sr)TiO3 thin films prepared by metalorganic chemical vapor deposition
    Takeshima, Y
    Tanaka, K
    Sakabe, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (9B): : 5389 - 5392
  • [39] Structural stability of (Ba,Sr)RuO3 electrodes on hydrogen annealing and effect of interfacial layers in (Ba,Sr)TiO3 thin films
    Choi, ES
    Park, SS
    Yoon, SG
    INTEGRATED FERROELECTRICS, 2002, 47 : 31 - 40
  • [40] Auger electron spectroscopy study on the tolerance to forming gas anneal of (Ba, Sr)TiO3 with SiO2 capped (Ba,Sr)RuO3 electrode
    Kim, YB
    Choi, DK
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (5A): : 2633 - 2638