Buried p-n junction formation in CuGaSe2 thin-film solar cells

被引：27

作者：

Ishizuka, Shogo ^{[1
]}

Yamada, Akimasa ^{[1
]}

Fons, Paul J. ^{[1
]}

Kamikawa-Shimizu, Yukiko ^{[1
]}

Komaki, Hironori ^{[1
]}

Shibata, Hajime ^{[1
]}

Niki, Shigeru ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 03期

关键词：

CRYSTAL-GROWTH; BAND-GAP; CUINSE2; HOMOJUNCTION; EFFICIENCY;

D O I：

10.1063/1.4861858

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

CuGaSe2/CdS interfaces and the mechanism behind the hetero p-n junction formation were investigated using solar cell devices which demonstrated about a 10% energy conversion efficiency. It was found that the CuGaSe2/CdS interface could be described as a CuGaSe2/Cu-deficient Cu-Ga-Se layer (CDL)/CdS structure and the p-n junction was located at the CuGaSe2/CDL interface that was present 50-100 nm from the CDL/CdS interface. While the difficulty of the realization of equilibrium n-type CuGaSe2 has been generally recognized, this result suggests that CDL consisting of ordered vacancy compound phases such as CuGa3Se5 can play the role of an n-type material. (C) 2014 AIP Publishing LLC.

引用

页数：4

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