Microstructural properties of CVD-grown CuGaSe2 based thin film solar cells

被引：0
|
作者：
Marrón, DF
Meeder, A
Bloeck, U
Schubert-Bischoff, R
Pfänder, N
Würz, R
Babu, SM
Schedel-Niedrig, T
Lux-Steiner, MC
机构：
[1] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany
[2] Max Planck Gesell, Fritz Haber Inst, Dept AC, D-14195 Berlin, Germany
来源：
THIN SOLID FILMS | 2003年 / 431卷
关键词：
CuGaSe2; microstructure; CVD; TEM; energy dispersive; X-ray; solar cell;
D O I：
10.1016/S000-6090(03)00264-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Microstructural aspects of interfaces involved in CuGaSe2 (CGSe) based thin film solar cells have been investigated. High resolution transmission electron microscopy and scanning energy dispersive X-ray techniques have been employed for the analysis of complete solar cell cross-sections, revealing details at nanometer scale of the soda lime glass/Mo/MoSe2/CGSe/CdS/i:ZnO/Ga:ZnO heterostructure making up the complete devices. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：237 / 241
页数：5
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