CVD of CuGaSe2 for thin film solar cells with various transport agents

被引：15
|
作者：
Fischer, D [1 ]
Meyer, N [1 ]
Kuczmik, M [1 ]
Beck, M [1 ]
Jäger-Waldau, A [1 ]
Lux-Steiner, MC [1 ]
机构：
[1] Hahn Meitner Inst Kernforsch Berlin GmbH, D-14109 Berlin, Germany
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 67卷 / 1-4期
关键词：
CuGaSe2; CVD; thin film solar cells;
D O I：
10.1016/S0927-0248(00)00269-5
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Chemical vapor deposition (CVD) in an open tube system was employed to deposit single-phase CuGaSe2 thin films on plain and Mo-coated glass substrates. The use of HCl and ternary CuGaSe2 source material resulted in non-stoichiometric volatilization of the source material. The use of binary source materials - Cu2Se and Ga2Se3 - in combination with I-2 and HCl as the respective transport agents yielded single-phase CuGaSe2 thin films while the source materials were volatilized stoichiometrically. Mo/CuGaSe2/CdS/ZnO devices were fabricated from these samples exhibiting an open-circuit voltages up to V-oc = 853 mV. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：105 / 112
页数：8
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