CVD of CuGaSe2 for thin film solar cells with various transport agents

被引：15

作者：

Fischer, D ^{[1
]}

Meyer, N ^{[1
]}

Kuczmik, M ^{[1
]}

Beck, M ^{[1
]}

Jäger-Waldau, A ^{[1
]}

Lux-Steiner, MC ^{[1
]}

机构：

[1] Hahn Meitner Inst Kernforsch Berlin GmbH, D-14109 Berlin, Germany

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 67卷 / 1-4期

关键词：

CuGaSe2; CVD; thin film solar cells;

D O I：

10.1016/S0927-0248(00)00269-5

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Chemical vapor deposition (CVD) in an open tube system was employed to deposit single-phase CuGaSe2 thin films on plain and Mo-coated glass substrates. The use of HCl and ternary CuGaSe2 source material resulted in non-stoichiometric volatilization of the source material. The use of binary source materials - Cu2Se and Ga2Se3 - in combination with I-2 and HCl as the respective transport agents yielded single-phase CuGaSe2 thin films while the source materials were volatilized stoichiometrically. Mo/CuGaSe2/CdS/ZnO devices were fabricated from these samples exhibiting an open-circuit voltages up to V-oc = 853 mV. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：105 / 112

页数：8

共 50 条

[21] TRANSPORT PROPERTIES OF CUGASE2
STANKIEWICZDEGIRIAT, J
ACTA CIENTIFICA VENEZOLANA, 1978, 29 : 61 - 61
[22] Electronic properties of modified CuGaSe2 solar cells
AbuShama, JA
Johnston, SW
Young, DL
Noufi, R
Thin-Film Compound Semiconductor Photovoltaics, 2005, 865 : 335 - 340
[23] TRANSPORT-PROPERTIES OF CUGASE2 THIN-FILMS
MANSOUR, BA
ELHAGARY, MA
THIN SOLID FILMS, 1995, 256 (1-2) : 165 - 170
[24] Charge carrier transport in polycrystalline CuGaSe2 thin films
Schuler, S
Nishiwaki, S
Beckmann, J
Rega, N
Brehme, S
Siebentritt, S
Lux-Steiner, MC
CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002, 2002, : 504 - 507
[25] CuGaSe2 Thin Film Solar Cells: Challenges for Developing Highly Efficient Wide-Gap Chalcopyrite Photovoltaics
Ishizuka, Shogo
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2019, 216 (15):
[26] FABRICATION AND PERFORMANCE OF A POLYCRYSTALLINE ZNCDS/CUGASE2 THIN-FILM SOLAR-CELL
REDDY, KTR
REDDY, PJ
JOURNAL OF MATERIALS SCIENCE LETTERS, 1991, 10 (08) : 439 - 441
[27] Three-dimensional structure of the buffer/absorber interface in CdS/CuGaSe2 based thin film solar cells
Rusu, M.
Baer, M.
Lehmann, S.
Sadewasser, S.
Weinhardt, L.
Kaufmann, C. A.
Strub, E.
Roehrich, J.
Bohne, W.
Lauermann, I.
Jung, Ch.
Heske, C.
Lux-Steiner, M. Ch.
APPLIED PHYSICS LETTERS, 2009, 95 (17)
[28] Growth of CuGaSe2 single crystal thin film for solar cell development and its solar cell application
Yun, Suk-jin
Hong, Kwang-joon
JOURNAL OF THE KOREAN CRYSTAL GROWTH AND CRYSTAL TECHNOLOGY, 2005, 15 (06): : 252 - 259
[29] Deposition and characterization of wide band gap CuGaSe2 thin films and solar cells
Yun, JH
Chalapathy, RBV
Kim, SK
Lee, JC
Song, J
Ahn, BT
Yoon, KH
CONFERENCE RECORD OF THE THIRTY-FIRST IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2005, 2005, : 445 - 448
[30] Investigation of deep-level defects in CuGaSe2 thin-film solar cells using photocapacitance methods
Hu, Xiaobo
Xue, Juanjuan
Tian, Jiao
Weng, Guoen
Chen, Shaoqiang
APPLIED OPTICS, 2017, 56 (08) : 2330 - 2335

← 1 2 3 4 5 →