Influence of lateral size on dielectric properties of ferroelectric thin films with structure transition zones

被引：0
|
作者：
Zhou Jing [1 ]
Lue Tian-Quan [1 ]
Xie Wen-Guang [2 ]
Cao Wen-Wu [1 ,3 ]
机构：
[1] Harbin Inst Technol, Ctr Condensed Matter Sci & Technol, Harbin 150001, Peoples R China
[2] Heilongjiang Univ, Dept Phys Sci & Technol, Harbin 150080, Peoples R China
[3] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA
来源：
CHINESE PHYSICS B | 2009年 / 18卷 / 07期
关键词：
ferroelectric thin film; transverse Ising model; dielectric properties; TRANSVERSE ISING-MODEL; SUSCEPTIBILITY; TEMPERATURE; DEPENDENCE; PARTICLES; PHYSICS;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
By taking into account structural transition zones near the lateral and thickness direction edges, this paper uses a modified transverse Ising model to study dielectric proper-ties of a finite size ferroelectric thin film in the framework of the mean-field approximation. The results indicate that the influence of the lateral size on the dielectric susceptibility cannot be neglected and lateral structural transition zones could be a crucial factor that improves the mean susceptibility of the fixed size film.
引用
收藏
页码：3054 / 3060
页数：7
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