Effects of domain formation on the dielectric properties of ferroelectric thin films

被引:2
|
作者
Pertsev, NA [1 ]
Koukhar, VG
Waser, R
Hoffmann, S
机构
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany
关键词
ferroelectric; thin film; domain; phase diagram; permittivity;
D O I
10.1080/10584580108215694
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A Landau-Ginsburg-Devonshire-type thermodynamic theory is used to describe dense laminar domain structures in epitaxial ferroelectric thin films grown on "tensile" substrates and to compute their small-signal dielectric responses. For PbTiO3 and BaTiO3 films, it is found that the ferroelectric phase transition results in the formation of a pseudo-tetragonal polydomain a(1)/a(2)/a(1)/a(2) state. The stability range of the a(1)/a(2)/a(1)/a(2) structure in the misfit strain-temperature phase diagram is determined. Effects of domain formation on the dielectric properties of ferroelectric films are analyzed by comparing permittivities of polydomain and single-domain films. Theoretical results are compared with the experimental data on (Ba1-xSrx)TiO3 films grown on platinum coated silicon substrates.
引用
收藏
页码:927 / 941
页数:15
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