A 0.4V 90nm CMOS Subthreshold Current Conveyor

被引:0
|
作者
Eldeeb, Mohammed A. [1 ]
Ghallab, Yehya H. [2 ,3 ]
Elghitani, Hassan [1 ]
Ismail, Yehea [3 ]
机构
[1] Misr Int Univ, Dept Commun & Elect, Cairo, Egypt
[2] Helwan Univ, Dept Biomed Engn, Cairo, Egypt
[3] Zewail City Sci & Technol AUC, CND, Cairo, Egypt
关键词
CMOS circuits; Self Cascode; Current Conveyor; Subthreshold; OTA;
D O I
暂无
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
This paper presents a new low power Current Conveyor II (CCII). The proposed circuit uses a 0.4 V single ended supply. The advantages of the proposed current mode readout circuit are threefold. Firstly, the proposed circuit provides extremely low power consumption while operating all MOSFETs in the subthreshold region providing the highest energy efficiency. Secondly, Self cascode technique is used to increase the gain of the differential amplifier to 65 dB. Finally, it is based on standard CMOS technology which can be easily used in VLSI circuits. Near perfect voltage/current tracking up to 1.25 / 0.8 MHz was achieved while consuming 1.7 mu W.
引用
收藏
页数:4
相关论文
共 50 条
  • [1] A 0.4 V Bulk-input Pseudo Amplifier in 90nm CMOS Technology
    Ahmadpour, A.
    [J]. PROCEEDINGS OF THE 13TH IEEE SYMPOSIUM ON DESIGN AND DIAGNOSTICS OF ELECTRONIC CIRCUITS AND SYSTEMS, 2010, : 301 - 304
  • [2] A V-band CMOS 90nm PLL
    Chung, Yun-Rong
    Yu, Yueh-Hua
    Lu, Yun-Chih
    Chen, Yi-Jan Emery
    [J]. 2014 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), 2014, : 1259 - 1261
  • [3] Low variation current source for 90nm CMOS
    Zhang, Xuan
    Pappu, Anand M.
    Apsel, Alyssa B.
    [J]. PROCEEDINGS OF 2008 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-10, 2008, : 388 - 391
  • [4] Investigation of the characteristics of GIDL current in 90nm CMOS technology
    Chen, HF
    Hao, Y
    Ma, XH
    Zhang, JC
    Li, K
    Cao, YR
    Zhang, JF
    Zhou, PJ
    [J]. CHINESE PHYSICS, 2006, 15 (03): : 645 - 648
  • [5] A NEW 90NM CMOS CURRENT FEEDBACK OPERATIONAL AMPLIFIER
    Elsayed, Fahmi
    Ibrahim, Mohamed F.
    Ghallab, Yehya H.
    Badawy, Wael
    Maundy, Brent
    [J]. 2009 IEEE 22ND CANADIAN CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING, VOLS 1 AND 2, 2009, : 113 - 116
  • [6] Design of a Voltage Reference Circuit Based on Subthreshold and Triode MOSFETs in 90nm CMOS
    Mohammed, Mahmood
    Abugharbieh, Khaldoon
    Abdelfattah, Mahmoud
    Kawar, Sanad
    [J]. 2014 IEEE INTERNATIONAL CONFERENCE ON IC DESIGN & TECHNOLOGY (ICICDT), 2014,
  • [7] Reliability Study of the 90nm CMOS Inverter
    Hadi, Dayanasari Abdul
    Soin, Norhayati
    Hatta, S. F. Wan Muhamad
    [J]. ENABLING SCIENCE AND NANOTECHNOLOGY, 2011, 1341 : 181 - 184
  • [8] 0.4V Low-Power 60-GHz Oscillator in 65nm CMOS
    Pepe, Domenico
    Zito, Domenico
    [J]. 2012 19TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS (ICECS), 2012, : 789 - 792
  • [9] An illustration of 90nm CMOS layout on PC
    Sicard, E
    Ben Dhia, S
    [J]. ICCDCS 2004: Fifth International Caracas Conference on Devices, Circuits and Systems, 2004, : 315 - 318
  • [10] Product reliability in 90nm CMOS and beyond
    Turner, AA
    [J]. 2005 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP, FINAL REPORT, 2005, : 163 - 167