Investigation of Si/4H-SiC Hetero-Junction Growth and Electrical Properties

被引：7

作者：

Guy, O. J. ^{[1
]}

Perez-Tomas, A. ^{[2
]}

Jennings, M. R. ^{[2
]}

Lodzinski, M. ^{[1
]}

Castaing, A. ^{[1
]}

Mawby, P. A. ^{[2
]}

Covington, J. A. ^{[2
]}

Wilks, S. P. ^{[1
]}

Hammond, R. ^{[3
]}

Connolly, D. ^{[4
]}

Jones, S. ^{[4
]}

Hopkins, J.

Wilby, T.

Rimmer, N.

Baker, K. ^{[5
]}

Conway, S. ^{[5
]}

Evans, S. ^{[6
]}

机构：

[1] Swansea Univ, Sch Engn, Swansea SA2 8PP, W Glam, Wales

[2] Univ Warwick, Sch Engn, Coventry CV4 7AL, W Midlands, England

[3] IQE Plc, Epitec Ltd, St Mellons CF3 0EG, England

[4] Semelab Plc, Lutterworth LE17 4JB, Leics, England

[5] Pure Wafer Int, Swansea SA7 OAB, W Glam, Wales

[6] ESEMI Ltd, Belfast BT9 7BB, Antrim, North Ireland

来源：

SILICON CARBIDE AND RELATED MATERIALS 2008 | 2009年 / 615-617卷

关键词：

4H-SiC; silicon; heterojunction; oxidation; Schottky; INTERFACES;

D O I：

10.4028/www.scientific.net/MSF.615-617.443

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the growth and charactcrisation of Si/SiC heterojunction Structures. Heterojunction Structures are of interest for low on-resistance diodes and as potential solutions to fabricating SiC MOS devices with lower interface state densities. The formation of the Si/SiC heterojunction using Chemical Vapour Deposition (CVD), Molecular Beam Epitaxy (MBE), Electron Beam Evaporation under UHV conditions (EBE-UHV) and Layer Transfer (I-T) are reported. The physical nature of Si/SiC Structures has been investigated using scanning electron microscopy (SEM). Results of electrical characterisation of the Si/SiC heterojunctions, are also reported. Finally. thermal oxidation of a Si / SiC heterojunction structures has been performed. The C(V) characteristics of the resulting oxides are compared to conventional thermal oxides on SiC.

引用

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页码：443 / 446

页数：4

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