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Resist outgassing characteristics in extreme ultraviolet lithography

被引：14
|
作者：
Watanabe, T
Hamamoto, K
Kinoshita, H
Hada, H
Komano, H
机构：
[1] Univ Hyogo, Lab Adv Sci & Technol Ind, Kamigori, Hyogo 6781205, Japan
[2] Tokyo Ohka Kogyo Co Ltd, Adv Mat Dev Div 1, Samukawa, Kanagawa 2530114, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2004年 / 43卷 / 6B期
关键词：
EUVL; chemical-amplified resist; outgassing; line edge roughness; solvent;
D O I：
10.1143/JJAP.43.3713
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Extreme ultraviolet (EUV) lithography requires a vacuum environment for exposure. The hydrocarbons outgassing ion species affect the reflectivity of the mask and the imaging mirror under EUV irradiation. Concerning the high-annealing-type chemically amplified (CA) resist based on the polyhydroxy styrene (PHS) resin, it is confirmed that propylene glycol monomethylether (PGME) which is employed as a solvent has the lowest outgassing characteristics under EUV irradiation. Mitigation of the hydrocarbons outgassing species and line edge roughness (LER) requires the main-chain-decomposition-type CA resist. From the outgassing measurement results, the methacrylate base resin can be employed in the resist process in EUV lithography.
引用
收藏
页码：3713 / 3717
页数：5
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