Extreme ultraviolet lithography

被引：286
|
作者：
Gwyn, CW [1 ]
Stulen, R
Sweeney, D
Attwood, D
机构：
[1] EUV LLC, Livermore, CA 94551 USA
[2] VNL, Livermore, CA 94551 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 06期
关键词：
D O I：
10.1116/1.590453
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An extreme ultraviolet (EUV) lithography tool using 13.4 nm radiation is being developed by a consortium of integrated circuit (IC) manufacturers to support 100 nm imaging for integrated circuit production. The 4x, 0.1 NA alpha tool has a >1 mu m depth of focus, all reflective optics, a xenon laser plasma source, and robust reflective masks. The technology is expected to support feature scaling down to 30 nm. (C) 1998 American Vacuum Society. [S0734-211X(98)12006-1].
引用
收藏
页码：3142 / 3149
页数：8
相关论文
共 50 条
  • [1] Extreme ultraviolet lithography
    Stulen, RH
    Sweeney, DW
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1999, 35 (05) : 694 - 699
  • [2] EXTREME ULTRAVIOLET LITHOGRAPHY
    Cummings, Kevin
    Suzuki, Kazuaki
    [J]. JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2009, 8 (04):
  • [3] Extreme ultraviolet lithography
    Sandia Natl Lab, Livermore, United States
    [J]. Opt Photonics News, 8 (35-38):
  • [4] Estimation of extreme ultraviolet power and throughput for extreme ultraviolet lithography
    Chiba, A.
    Ota, K.
    Ogawa, T.
    Okazaki, S.
    [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2001, 40 (07): : 4535 - 4539
  • [5] Estimation of extreme ultraviolet power and throughput for extreme ultraviolet lithography
    Chiba, A
    Ota, K
    Ogawa, T
    Okazaki, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (07): : 4535 - 4539
  • [6] More on extreme ultraviolet lithography
    不详
    [J]. MATERIALS WORLD, 2008, 16 (05) : 9 - 9
  • [7] Masks for extreme ultraviolet lithography
    Vernon, SP
    Kearney, PA
    Tong, WM
    Prisbrey, S
    Larson, C
    Moore, CE
    Weber, FW
    Cardinale, G
    Yan, PY
    Hector, SD
    [J]. 18TH ANNUAL SYMPOSIUM ON PHOTOMASK TECHNOLOGY AND MANAGEMENT, 1998, 3546 : 184 - 193
  • [8] Maskless extreme ultraviolet lithography
    [J]. J Vac Sci Technol B Microelectron Nanometer Struct, (3047-3051):
  • [9] Photoresist for Extreme Ultraviolet Lithography
    Tao, Peipei
    Sheng, Li
    Wang, Qianqian
    Cui, Hao
    Wang, Xiaolin
    He, Xiangming
    Xu, Hong
    [J]. IWAPS 2020: PROCEEDINGS OF 2020 4TH INTERNATIONAL WORKSHOP ON ADVANCED PATTERNING SOLUTIONS (IWAPS), 2020, : 53 - 56
  • [10] Status of Extreme Ultraviolet Lithography
    Kinoshita, Hiroo
    [J]. JOURNAL OF BIOMEDICAL NANOTECHNOLOGY, 2006, 2 (02) : 99 - 102
12345