Morphological stability of the Stranski-Krastanow systems under an electric field

被引：5
|
作者：
Chiu, C. -h. [1 ]
Poh, C. T. [1 ]
Huang, Z. [1 ]
机构：
[1] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117576, Singapore
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 24期
关键词：
D O I：
10.1063/1.2212052
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The morphological stability of the Stranski-Krastanow (SK) system against surface undulation is investigated for the case where the SK system consists of a conductor film and a thick substrate and it is under the influence of an electric field induced by an electrode above the film. It is shown that a flat electrode reduces the critical thickness below which the SK system is completely stable against surface undulation. Applying a wavy electrode to the completely stable system, on the other hand, causes the flat film surface to develop into an equilibrium ripple profile.
引用
收藏
页数：3
相关论文
共 50 条
  • [21] Surface chemical potential in multilayered Stranski-Krastanow systems: An analytic study and anticipated applications
    Li, X.L.
    Journal of Applied Physics, 2009, 106 (11):
  • [22] Reversibility of the island shape, volume and density in Stranski-Krastanow growth
    Ledentsov, NN
    Shchukin, VA
    Heitz, R
    Bimberg, D
    Ustinov, VM
    Cherkashin, NA
    Kovsh, AR
    Musikhin, YG
    Volovik, BV
    Zhukov, AE
    Cirlin, GE
    Alferov, ZI
    PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 375 - 376
  • [23] Adatom migration in Stranski-Krastanow growth of InAs quantum dots
    Shiramine, K
    Itoh, T
    Muto, S
    Kozaki, T
    Sato, S
    JOURNAL OF CRYSTAL GROWTH, 2002, 242 (3-4) : 332 - 338
  • [24] Nature of the Stranski-Krastanow transition during epitaxy of InGaAs on GaAs
    Walther, T
    Cullis, AG
    Norris, DJ
    Hopkinson, M
    PHYSICAL REVIEW LETTERS, 2001, 86 (11) : 2381 - 2384
  • [25] Stranski-Krastanow growth of copper overlayers on the Ni(110) surface
    Fukuda, T.
    Umezawa, K.
    Nakayama, H.
    SURFACE SCIENCE, 2012, 606 (15-16) : 1221 - 1226
  • [26] Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)
    Norris, D. J.
    Qiu, Y.
    Dobbie, A.
    Myronov, M.
    Walther, T.
    JOURNAL OF APPLIED PHYSICS, 2014, 115 (01)
  • [27] New insight into the kinetics of Stranski-Krastanow growth of Ge on Si(001)
    Le Thanh, V
    SURFACE SCIENCE, 2001, 492 (03) : 255 - 269
  • [28] Critical layer thickness in Stranski-Krastanow growth of Ge on Si(001)
    Varga, K
    Wang, LG
    Pantelides, ST
    Zhang, ZY
    SURFACE SCIENCE, 2004, 562 (1-3) : L225 - L230
  • [29] Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth
    Ledentsov, NN
    Shchukin, VA
    Grundmann, M
    Kirstaedter, N
    Bohrer, J
    Schmidt, O
    Bimberg, D
    Ustinov, VM
    Egorov, AY
    Zhukov, AE
    Kopev, PS
    Zaitsev, SV
    Gordeev, NY
    Alferov, ZI
    Borovkov, AI
    Kosogov, AO
    Ruvimov, SS
    Werner, P
    Gosele, U
    Heydenreich, J
    PHYSICAL REVIEW B, 1996, 54 (12) : 8743 - 8750
  • [30] DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100)
    EAGLESHAM, DJ
    CERULLO, M
    PHYSICAL REVIEW LETTERS, 1990, 64 (16) : 1943 - 1946
12345