On the impact of microstructure on luminescence of InGaN/GaN multi quantum wells grown by molecular beam epitaxy

被引：0
|
作者：
Böttcher, T
Einfeldt, S
Figge, S
Kirchner, V
Heinke, H
Hommel, D
Rudloff, D
Riemann, T
Christen, J
机构：
[1] Univ Bremen, Inst Solid State Phys, D-8334 Bremen, Germany
[2] Univ Magdeburg, D-39016 Magdeburg, Germany
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1999年 / 176卷 / 01期
关键词：
D O I：
10.1002/(SICI)1521-396X(199911)176:1<291::AID-PSSA291>3.0.CO;2-M
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Similar InxGa1-xNiGaN multi quantum wells (MQWs) have been grown by molecular beam epitaxy (MBE) on thick GaN template layers produced either by MBE or metalorganic vapour phase epitaxy (;MOVPE). The templates differ significantly in surface flatness obviously influencing the properties of the MQWs, as well as their microstructure and luminescence. In contrast to fully MBE-grown structures, samples grown on MOVPE template layers exhibit a luminescence close to quantum well structures produced by MOVPE.
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收藏
页码：291 / 295
页数：5
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