Resonant gate driver with efficient gate energy recovery and switching loss reduction

被引:0
|
作者
Kim, I. -G. [1 ]
Kwak, S. -S. [1 ]
机构
[1] Chung Ang Univ, Sch Elect & Elect Engn, Seoul 156756, South Korea
基金
新加坡国家研究基金会;
关键词
resonant gate driver; energy recovery; switching loss; HIGH-FREQUENCY; CIRCUIT; CONVERTER; DESIGN;
D O I
10.1080/00207217.2015.1036805
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article describes a novel resonant gate driver for charging the gate capacitor of power metal-oxide semiconductor field-effect-transistors (MOSFETs) that operate at a high switching frequency in power converters. The proposed resonant gate driver is designed with three small MOSFETs to build up the inductor current in addition to an inductor for temporary energy storage. The proposed resonant gate driver recovers the CV2 gate loss, which is the largest loss dissipated in the gate resistance in conventional gate drivers. In addition, the switching loss is reduced at the instants of turn on and turn off in the power MOSFETs of power converters by using the proposed gate driver. Mathematical analyses of the total loss appearing in the gate driver circuit and the switching loss reduction in the power switch of power converters are discussed. Finally, the proposed resonant gate driver is verified with experimental results at a switching frequency of 1MHz.
引用
收藏
页码:553 / 570
页数:18
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