A Gate Driver Approach Enabling Switching Loss Reduction for Hard-Switching Applications

被引：0
|
作者：
Ebli, Michael [1 ]
Wattenberg, Martin [1 ]
Pfost, Martin [2 ]
机构：
[1] Reutlingen Univ, Robert Bosch Ctr Power Elect, Alteburgstr 150, D-72762 Reutlingen, Germany
[2] Dortmund Tech Univ, Chair Energy Convers, Emil Figge Str 68, D-44227 Dortmund, Germany
来源：
2017 IEEE 12TH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS AND DRIVE SYSTEMS (PEDS) | 2017年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A gate driver approach is presented for the reduction of turn-on losses in hard-switching applications. A significant turn-on loss reduction of up to 55 % has been observed for SiCMOSFETs. The gate driver approach uses a transformer which couples energy from the power path back into the gate path during switching events, providing increased gate driver current and thereby faster switching speed. The gate driver approach was tested on a boost converter running at a switching frequency up to 300 kHz. With an input voltage of 300 V and an output voltage of 600 V, it was possible to reduce the converter losses by 8 % at full load. Moreover, the output power range could be extended by 23 % (from 2.75 kW to 3.4 kW) due to the reduction of the turn-on losses.
引用
收藏
页码：968 / 971
页数：4
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