A resonant MOSFET gate driver with efficient energy recovery

被引:154
|
作者
Chen, YH [1 ]
Lee, FC
Amoroso, L
Wu, HP
机构
[1] Linear Technol Corp, Milpitas, CA 95035 USA
[2] Virginia Polytech Inst & State Univ, Blacksburg, VA 24061 USA
[3] Int Rectifier Adv Analog, Santa Clara, CA 95050 USA
关键词
DC-DC power conversion; high frequency; IGBT; power MOSFET; PWM; resonant gate drive;
D O I
10.1109/TPEL.2003.823206
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High frequency pulse-width modulation (PWM) converters generally suffer from excessive gate drive loss. This paper presents a resonant gate drive circuit that features efficient energy recovery at both charging and discharging transitions. Following a brief introduction of metal oxide semiconductor field effect transistor (MOSFET) gate drive loss, this paper discusses the gate drive requirements for high frequency PWM applications and common shortcomings of existing resonant gate drive techniques. To overcome the apparent disparity, a new resonant MOSFET gate drive circuit is then presented. The new circuit produces low gate drive loss, fast switching speed, clamped gate voltages, immunity to false trigger and has no limitation on the duty cycle. Experimental results further verify its functionality.
引用
收藏
页码:470 / 477
页数:8
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