Landau damped intersubband plasmons in InAs/AlSb quantum wells

被引：10
|
作者：
Richards, D [1 ]
Wagner, J [1 ]
Schmitz, J [1 ]
机构：
[1] FRAUNHOFER INST APPL SOLID STATE PHYS,D-79108 FREIBURG,GERMANY
来源：
SOLID STATE COMMUNICATIONS | 1996年 / 100卷 / 01期
关键词：
quantum wells; semiconductors; electronic band structure; inelastic light scattering;
D O I：
10.1016/0038-1098(96)00370-5
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We present a combined theoretical and Raman scattering study of coupled intersubband plasmon-LO phonon modes in InAs/AlSb quantum wells, highlighting the importance of the InAs conduction band nonparabolicity in such systems. We demonstrate that under the illumination conditions of the Raman measurements, electron densities can be as high as 4 x 10(12) cm(-2) and give evidence of Landau damping of intersubband plasmons. Copyright (C) 1996 Elsevier Science Ltd
引用
收藏
页码：7 / 12
页数：6
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