PHOTOCONDUCTIVITY IN ALSB/INAS QUANTUM-WELLS

被引：30

作者：

GAUER, C ^{[1
]}

SCRIBA, J ^{[1
]}

WIXFORTH, A ^{[1
]}

KOTTHAUS, JP ^{[1
]}

NGUYEN, C ^{[1
]}

TUTTLE, G ^{[1
]}

ENGLISH, JH ^{[1
]}

KROEMER, H ^{[1
]}

机构：

[1] UC SANTA BARBARA,QUEST CTR,SANTA BARBARA,CA 95106

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 01期

关键词：

D O I：

10.1088/0268-1242/8/1S/031

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measuring photoconductivity at low temperatures, we investigate the recently observed bipolar behaviour of the persistent photoeffect in InAs/AlSb quantum wells. Depending upon the incident wavelength we observe either a persistent increase or a persistent decrease of the carrier density in the well. We discuss our experimental findings in terms of a simple model based on the band structure as known to date and the growth parameters of the heterostructure.

引用

页码：S137 / S140

页数：4

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