PHOTOLUMINESCENCE FROM NARROW INAS-ALSB QUANTUM-WELLS

被引：23
|
作者：
BRAR, B
KROEMER, H
IBBETSON, J
ENGLISH, JH
机构：
[1] Department of Electrical and Computer Engineering, University of California, Santa Barbara
来源：
APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 25期
关键词：
D O I：
10.1063/1.109053
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on photoluminescence spectra from narrow InAs-AlSb quantum wells. Strong, clearly resolved peaks for well widths from 2 to 8 monolayers were observed. Transmission electron micrographs show direct evidence for the structural quality of the quantum well structures. The transition energies of the narrowest wells suggest a strong influence of the AlSb X-barrier on the electronic states in the conduction band.
引用
收藏
页码：3303 / 3305
页数：3
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